A Review: Application of Doped Hydrogenated Nanocrystalline Silicon Oxide in High Efficiency Solar Cell Devices.

Due to the unique microstructure of hydrogenated nanocrystalline silicon oxide (nc-SiO:H), the optoelectronic properties of this material can be tuned over a wide range, which makes it adaptable to different solar cell applications. In this work, the authors review the material properties of nc-SiO:H and the versatility of its applications in different types of solar cells. The review starts by introducing the growth principle of doped nc-SiO:H layers, the effect of oxygen content on the material properties, and the relationship between optoelectronic properties and its microstructure.

Phosphorus Catalytic Doping on Intrinsic Silicon Thin Films for the Application in Silicon Heterojunction Solar Cells.

Parasitic absorption and limited fill factor (FF) brought in by the use of amorphous silicon layers are efficiency-limiting challenges for the silicon heterojunction (SHJ) solar cells. In this work, postdeposition phosphorus (P) catalytic doping (Cat-doping) on intrinsic amorphous silicon (a-Si:H(i)) at a low substrate temperature was carried out and a P concentration of up to 6 × 10 cm was reached. The influences of filament temperature, substrate temperature, and processing pressure on the P profiles were systemically studied by secondary-ion mass spectrometry.