Graphene nanostrip digital memory device.

In equilibrium, graphene nanostrips, with hydrogens sp2-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.

Building blocks for integrated graphene circuits.

The observation of single sheets of graphite (graphene) presents new possibilities for carbon-based nanoelectronics. We report defect tolerant configurations for a nearly reflectionless 120 degrees turn and nearly reflectionless symmetric and asymmetric splitters, which can be cut from graphene. Connections between zigzag strips of different widths can be made with either low or high reflectance depending on the connection shape.

Ballistic transport in graphene nanostrips in the presence of disorder: importance of edge effects.

Stimulated by recent advances in isolating graphene and similarities to single-wall carbon nanotubes, simulations were performed to assess the effects of static disorder on the conductance of metallic armchair- and zigzag-edge graphene nanostrips. Both strip types were found to have outstanding ballistic transport properties in the presence of a substrate-induced disorder. However, only the zigzag-edge strips retain these properties in the presence of irregular edges, making them better initial synthetic targets for ballistic device applications.