Zero-field-cooling exchange bias up to room temperature in the strained kagome antiferromagnet MnSn.

Zero-field-cooling exchange bias (ZFC EB) has always been a research hotspot for researchers, because it can realize the movement of the magnetization hysteresis loop along the field axis without field cooling, which greatly expands the universality and convenience of the application of the exchange bias effect. Achieving ZFC EB at room temperature is an ongoing challenge. To this end, a design strategy from the sublattice level is proposed, and a wide temperature range ZFC EB up to room temperature with a vertical magnetization shift is observed in the strained kagome antiferromagnet MnSn.

Influence of the type of carrier on ferromagnetism in a Si semiconductor implanted with Cu ions.

Silicon semiconductor samples implanted with Cu ions and samples co-implanted with Cu- and N-ions were prepared by MEVVA and the Kaufman technique. None of the samples showed evidence of secondary phases. The initially n-type Si matrix, when implanted with Cu ions, changed to a p-type semiconductor, and the Cu ions existed as local Cu2+ cations in the p-type environment.

Magnetic properties of Al-SiC co-sputtered films grown by radio frequency sputtering.

Room-temperature ferromagnetism was observed in the Al-SiC co-sputtered films fabricated by radio frequency (RF) sputtering. When the annealing temperature (Ta) was increased from 800 to 1100 degrees C, the ferromagnetic ordering was present with the formation of Al-C bonds. Both annealing and Al-doped the films can improve the crystallization of SiC and induce long-range magnetic order in the Al-SiC co-sputtered films.