Atomic Basal Defect-Rich MoS by One-Step Synthesis and Mechanism Exploration.

Two-dimensional molybdenum disulfide (2D MoS) shows great promise as a surface-enhanced Raman scattering (SERS) substrate due to its strong exciton resonance. However, the inert basal plane limits the performance of SERS. In this work, a strategy is proposed for the one-step synthesis of atomically basal defect-rich MoS.

Adsorption Behavior of NO and NO on Two-Dimensional As, Sb, and Bi Materials: First-Principles Insights.

To address the most significant environmental challenges, the quest for high-performance gas sensing materials is crucial. Among numerous two-dimensional materials, this study investigates the gas-sensitive capabilities of monolayer As, Sb, and Bi materials. To compare the gas detection abilities of these three materials, we employ first-principles calculations to comprehensively study the adsorption behavior of NO and NO gas molecules on the material surfaces.

Cuproptosis Related Gene Associated with Poor Prognosis and Malignant Biological Characteristics in Lung Adenocarcinoma.

Purpose: Cuproptosis plays a crucial role in the biological function of cells. The subject of this work was to analyze the effects of cuproptosis-related genes (CRGs) on the prognosis and biological function in lung adenocarcinoma (LUAD).

Methods: In this study, RNA sequencing and clinical data of LUAD samples were screened from public databases and our institution.

Deletion of ARGLU1 causes global defects in alternative splicing in vivo and mouse cortical malformations primarily via apoptosis.

Haploinsufficient mutation in arginine and glutamine-rich protein 1 (Arglu1), a newly identified pre-mRNA splicing regulator, may be linked to neural developmental disorders associated with mental retardation and epilepsy in human patients, but the underlying causes remain elusive. Here we show that ablation of Arglu1 promotes radial glial cell (RG) detachment from the ventricular zone (VZ), leading to ectopic localized RGs in the mouse embryonic cortex. Although they remain proliferative, ectopic progenitors, as well as progenitors in the VZ, exhibit prolonged mitosis, p53 upregulation and cell apoptosis, leading to reduced neuron production, neuronal loss and microcephaly.

Defect recombination suppression and carrier extraction improvement for efficient CsPbBr/SnOheterojunction photodetectors.

Perovskite materials with excellent optical and electronic properties have huge potential in the research field of photodetectors. Constructing heterojunctions and promoting carrier transportation are significant for the development of perovskite-based optoelectronics devices with high performances. Herein, we demonstrated a CsPbBr/SnOheterojunction photodetector and improved the device performances through post-annealing treatment of SnOfilm.

Band structural and absorption characteristics of antimonene/bismuthene monolayer heterojunction calculated by first-principles.

The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively. It exhibits an atom's number in planner-dependent tunable band gap and near-infrared range absorption characteristics.

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain.

Review for Rare-Earth-Modified Perovskite Materials and Optoelectronic Applications.

In recent years, rare-earth metals with triply oxidized state, lanthanide ions (Ln), have been demonstrated as dopants, which can efficiently improve the optical and electronic properties of metal halide perovskite materials. On the one hand, doping Ln ions can convert near-infrared/ultraviolet light into visible light through the process of up-/down-conversion and then the absorption efficiency of solar spectrum by perovskite solar cells can be significantly increased, leading to high device power conversion efficiency. On the other hand, multi-color light emissions and white light emissions originated from perovskite nanocrystals can be realized via inserting Ln ions into the perovskite crystal lattice, which functioned as quantum cutting.

Self-Structural Healing of Encapsulated Perovskite Microcrystals for Improved Optical and Thermal Stability.

Perovskite materials and their optoelectronic devices have attracted intensive attentions in recent years. However, it is difficult to further improve the performance of perovskite devices due to the poor stability and the intrinsic deep level trap states (DLTS), which are caused by surface dangling bonds and grain boundaries. Herein, the CH NH PbBr perovskite microcrystal is encapsulated by a dense Al O layer to form a microenvironment.

Emission characteristics variation of GaAsSb/AlGaAs strained multiple quantum wells caused by rapid thermal annealing.

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAsSb/AlGaAs multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature.

Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states.

Mixed-dimensional optoelectronic devices bring new challenges and opportunities over the design of conventional low-dimensional devices. In this work, we develop unreported mixed-dimensional GaAs photodetectors by utilizing 1D GaAs nanowires (NWs) and 2D GaAs non-layered sheets (2DNLSs) as active device materials. The fabricated photodetector exhibits a responsivity of 677 A W-1 and a detectivity of 8.

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array.

Femtosecond optical pump-probe spectroscopy is employed to elucidate the ultrafast carrier nonradiative relaxation dynamics of bare GaAs and a core-shell GaAs/AlGaAs semiconductor nanowire array. Different from the single nanowire conventionally used for the study of ultrafast dynamics, a simple spin coating and peeling off method was performed to prepare transparent organic films containing a vertical oriented nanowire array for transient absorption measurement. The transient experiment provides the direct observation of carrier thermalization, carrier cooling, thermal dissipation and band-gap energy evolutions along with the carrier relaxations.

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector.

In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers.

Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure.

Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent.

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.

III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures.

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment.

ZnO nanowires play a very important role in optoelectronic devices due to the wide bandgap and high exciton binding energy. However, for one-dimensional nanowire, due to the large surface to volume ratio, surface traps and surface adsorbed species acts as an alternate pathway for the de-excitation of carriers. Ar plasma treatment is a useful method to enhance the optical property of ZnO nanowires.

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.

Metal-semiconductor-metal (MSM)-structured GaAs-based nanowire photodetectors have been widely reported because they are promising as an alternative for high-performance devices. Owing to the Schottky built-in electric fields in the MSM structure photodetectors, enhancements in photoresponsivity can be realized. Thus, strengthening the built-in electric field is an efficacious way to make the detection capability better.

Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films.

The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min. Through temperature dependence photoluminescence (TDPL) and power dependence photoluminescence (PL) measurement, the peak located at the low-energy shoulder was confirmed to be localized state emission and the high energy one comes from free-carrier emission.

Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment.

GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb.

Analysis of the influence and mechanism of sulfur passivation on the dark current of a single GaAs nanowire photodetector.

Nanowire photodetectors, which have the advantages of fast response and high photoelectric conversion efficiency, can be widely applied in various industries. However, the rich surface states result in large dark current and can hinder the development of high-performance nanowire photodetectors. In this paper, the influence and mechanism of sulfur surface passivation on the dark current of a single GaAs nanowire photodetector have been studied.

Comparative transcriptome analysis of the global circular RNAs expression profiles between SHEE and SHEEC cell lines.

Esophageal squamous cell carcinoma (ESCC) is widely regarded as one of the most lethal types of cancer around the world. The fact that early detection of ESCC could dramatically improve the treatment outcome of the patients has sparked considerable interest in searching for reliable and accurate diagnostic biomarkers. Recently, circular RNAs (circRNA) have emerged as a new type of non-coding RNAs with significant RNase resistance, wide abundance and remarkable internal diversity.

Ordered and Disordered Phases in MoWS Monolayer.

With special quasirandom structure approach and cluster expansion method combined with first-principle calculations, we explore the structure and electronic properties of monolayer MoWS alloy with disordered phase and ordered phase. The phase transition from ordered phase to disordered phase is found to happen at 41 K and 43 K for x = 1/3 and x = 2/3, respectively. The band edge of VBM is just related with the composition x, while the band edge of CBM is sensitive to the degree of order, besides the concentration of W.

Targeting of miR-150 on Gli1 gene to inhibit proliferation and cell cycle of esophageal carcinoma EC9706.

Objective: Glioma-associated oncogene homolog 1 (Gli1) in Hedgehog signal pathway regulates Cyclin D1 expression, cell cycle or proliferation modulation. Esophageal cancer patients had significantly elevated Gli1 expression, which is related with survival and prognosis. It has been demonstrated that the level of miR-150 was decreased in esophageal cancer patients compared to normal control.

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy.

We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component.