Publications by Demid S Abramkin

Publications by authors named "Demid S Abramkin"

Nanomaterials (Basel)

November 2024

* It identifies that surface pits, ranging in size and depth, are influenced by factors such as substrate annealing temperature and the alloy composition of InAlAs.
* A model is proposed linking the formation of these surface pits and composition clusters to local strain fields near threading dislocations affecting the incorporation of In adatoms during growth.

Nanomaterials (Basel)

February 2023

- This study explored the creation and structural characteristics of self-assembled GaSb/AlP quantum dots (SAQDs) using experimental techniques, focusing on their growth through molecular beam epitaxy on GaP and GaP/Si substrates.
- The research found that while SAQDs exhibit almost complete plastic strain relaxation, dislocations formed in GaP substrates significantly decrease luminescence efficiency, unlike those on GaP/Si substrates which maintain performance likely due to different types of dislocations.
- The GaP/Si-based SAQDs have a unique type II energy spectrum with an indirect bandgap, contributing to a long potential charge storage time of over 10 years, indicating their promise for applications in universal memory cells.

Nanomaterials (Basel)

December 2022

- The study explores using low-temperature (LT) GaAs layers as a method to reduce dislocation defects in GaAs/Si heterostructures by investigating the effects of these layers and post-growth annealing.
- Results showed that introducing LT-GaAs layers and performing cyclic annealing significantly reduced dislocation density, surface roughness, and non-radiative recombination centers in the GaAs/Si regions.
- The improvements in the quality of near-surface GaAs layers are attributed to elastic deformations causing dislocation line bending and gallium vacancies diffusing into the GaAs layers, making these heterostructures suitable for high-quality light-emitting applications with quantum dots.

Nanomaterials (Basel)

October 2022

* The study theoretically analyzes the energy spectrum of hole states in novel InGaSb/AlP SAQDs, considering factors like material intermixing and the formation of strained SAQDs from various alloy compositions.
* The optimal configuration identified for non-volatile memory applications is GaSbP/AlP SAQDs with specific compositions and sizes, which show promising energy values that suggest strong potential for effective charge storage.