Increasing the InN content in the InGaN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InGaN nanowires grown by molecular beam epitaxy on Si substrates at 625 °C.
View Article and Find Full Text PDFThis work presents for the first time the possibility of reducing and tuning the work function of field emission cathodes coated with metal oxides by changing the chemical composition of oxide coatings using an example of heat-treated CNT/NiO nanocomposite structures. These cathodes are formulated using carbon nanotube (CNT) arrays that are coated with ultrathin layers of nickel oxide (CNT/NiO) by atomic layer deposition (ALD). It was found that NiO at thicknesses of several nanometers grown on CNTs heat treated at a temperature of 350 °C can change its stoichiometric composition towards the formation of oxygen vacancies, since the Ni/Ni peak area ratio increases and the position of the Ni-O peak binding energies shifts as observed using X-ray photoelectron spectroscopy (XPS).
View Article and Find Full Text PDFThe rational design of composites based on graphene/metal oxides is one of the pillars for advancing their application in various practical fields, particularly gas sensing. In this study, a uniform distribution of ZnO nanoparticles (NPs) through the graphene layer was achieved, taking advantage of amine functionalization. The beneficial effect of amine groups on the arrangement of ZnO NPs and the efficiency of their immobilization was revealed by core-level spectroscopy, pointing out strong ionic bonding between the aminated graphene (AmG) and ZnO.
View Article and Find Full Text PDFSilicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000 °C in vacuum.
View Article and Find Full Text PDFThe ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2023
We present the results of a temperature-dependent photoluminescence (PL) spectroscopy study on CuInS quantum dots (QDs). In order to elucidate the influence of QD size on PL temperature dependence, size-selective precipitation was used to obtain several nanoparticle fractions. Additionally, the nanoparticles' morphology and chemical composition were studied using transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy.
View Article and Find Full Text PDFThe facile synthesis of biografted 2 derivatives complemented by a nuanced understanding of their properties are keystones for advancements in biosensing technologies. Herein, we thoroughly examine the feasibility of aminated graphene as a platform for the covalent conjugation of monoclonal antibodies towards human IgG immunoglobulins. Applying core-level spectroscopy methods, namely X-ray photoelectron and absorption spectroscopies, we delve into the chemistry and its effect on the electronic structure of the aminated graphene prior to and after the immobilization of monoclonal antibodies.
View Article and Find Full Text PDFThe artificial olfaction units (or e-noses) capable of room-temperature operation are highly demanded to meet the requests of society in numerous vital applications and developing Internet-of-Things. Derivatized 2D crystals are considered as sensing elements of choice in this regard, unlocking the potential of the advanced e-nose technologies limited by the current semiconductor technologies. Herein, we consider fabrication and gas-sensing properties of On-chip multisensor arrays based on a hole-matrixed carbonylated (C-ny) graphene film with a gradually changed thickness and concentration of ketone groups of up to 12.
View Article and Find Full Text PDFEmerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross-section, technological feasibility and structural perfection. All these criteria are met with self-assembled gallium phosphide (GaP) epitaxial nanowires.
View Article and Find Full Text PDFHybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks of InGaN nanowires. It is defined that short-wavelength maxima decreased by 20%, whereas the long-wavelength maxima increased by 19%.
View Article and Find Full Text PDFAlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature elevation to smooth out the emerging roughness of the growth front. Post-growth annealing of the obtained material allowed us to form a developed system of As or AsSb nanoinclusions, which occupy 0.
View Article and Find Full Text PDFThe films of single-walled carbon nanotubes (SWCNTs) are a promising material for flexible transparent electrodes, which performance depends not only on the properties of individual nanotubes but also, foremost, on bundling of individual nanotubes. This work investigates the impact of densification on optical and electronic properties of SWCNT bundles and fabricated films. Our ab initio analysis shows that the optimally densified bundles, consisting of a mixture of quasi-metallic and semiconducting SWCNTs, demonstrate quasi-metallic behavior and can be considered as an effective conducting medium.
View Article and Find Full Text PDFA synthesis protocol of polyvinylpyrrolidone-capped AgInS quantum dots in aqueous solution is reported. Nanoparticle morphology and chemical composition were studied by means of TEM, XRD, XPS, and FTIR. The obtained quantum dots were luminescent in the visible range.
View Article and Find Full Text PDFIn the present paper we discuss correlations between crystal structure and magnetic properties of epitaxial ε-FeO films grown on GaN. The large magnetocrystalline anisotropy and room temperature multiferroic properties of this exotic iron oxide polymorph, make it a perspective material for the development of low power consumption magnetic media storage devices. Extending our recent progress in PLD growth of ε-FeO on the surface of technologically important nitride semiconductors, we apply reciprocal space tomography by electron and x-ray diffraction to investigate the break of crystallographic symmetry occurring at the oxide-nitride interface resulting in the appearance of anisotropic crystallographic disorder in the sub-100 nm ε-FeO films.
View Article and Find Full Text PDFGraphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.
View Article and Find Full Text PDFSemiconductor nanowires exhibit numerous capabilities to advance the development of future optoelectronic devices. Among the III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear susceptibility, making it especially promising for nanophotonic applications. However, investigation of single nanostructures and their waveguiding properties remains challenging owing to typically planar experimental arrangements.
View Article and Find Full Text PDFWe investigated multilayer plates prepared by exfoliation from a high-quality MoS crystal and revealed that they represent a new object - a van der Waals homostructure consisting of a bulk core and a few detached monolayers on its surface. This architecture comprising elements with different electron band structures leads to specific luminescence, when the broad emission band from the core is cut by the absorption peaks of strong exciton resonances in the surface monolayers. The exfoliated flakes exhibit strong optical anisotropy.
View Article and Find Full Text PDFIn this study, the magnetic properties of magnetosomes isolated from lyophilized magnetotactic bacteria SO-1 were assessed for the first time. The shape and size of magnetosomes and cell fragments were studied by electron microscopy and dynamic light scattering techniques. Phase and elemental composition were analyzed by X-ray and electron diffraction and Raman spectroscopy.
View Article and Find Full Text PDFTailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask.
View Article and Find Full Text PDFLaser-induced periodic surface structures (LIPSS) can be fabricated in virtually all types of solid materials and show great promise for efficient and scalable production of surface patterns with applications in various fields from photonics to engineering. While the majority of LIPSS manifest as modifications of the surface relief, in special cases, laser impact can also lead to periodic modulation of the material phase state. Here, we report on the fabrication of high-quality periodic structures in the films of phase-change material GeSbTe (GST).
View Article and Find Full Text PDFYoung's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory.
View Article and Find Full Text PDFInGaN nanostructures are among the most promising candidates for visible solid-state lighting and renewable energy sources. To date, there is still a lack of information about the influence of the growth conditions on the physical properties of these nanostructures. Here, we extend the study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam epitaxy.
View Article and Find Full Text PDFControl and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires.
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