Robust Ag/ZrO/WS/Pt Memristor for Neuromorphic Computing.

The development of the information age has made resistive random access memory (RRAM) a critical nanoscale memristor device (MD). However, due to the randomness of the area formed by the conductive filaments (CFs), the RRAM MD still suffers from a problem of insufficient reliability. In this study, the memristor of Ag/ZrO/WS/Pt structure is proposed for the first time, and a layer of two-dimensional (2D) WS nanosheets was inserted into the MD to form 2D material and oxide double-layer MD (2DOMD) to improve the reliability of single-layer devices.

Vacancy-Induced Synaptic Behavior in 2D WS Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.

Memristors with nonvolatile memory characteristics have been expected to open a new era for neuromorphic computing and digital logic. However, existing memristor devices based on oxygen vacancy or metal-ion conductive filament mechanisms generally have large operating currents, which are difficult to meet low-power consumption requirements. Therefore, it is very necessary to develop new materials to realize memristor devices that are different from the mechanisms of oxygen vacancy or metal-ion conductive filaments to realize low-power operation.

Flexible Transparent Organic Artificial Synapse Based on the Tungsten/Egg Albumen/Indium Tin Oxide/Polyethylene Terephthalate Memristor.

As artificial synapses in biomimetics, memristors have received increasing attention because of their great potential in brain-inspired neuromorphic computing. The use of biocompatible and degradable materials as the active resistive layer is promising in memristor fabrication. In this work, we select egg albumen as the resistive layer to fabricate flexible tungsten/egg albumen/indium tin oxide/polyethylene terephthalate devices, which can operate normally under mechanical bending without significant performance degradation.

Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors.

With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self-assembled lead sulfide (PbS) quantum dots (QDs) are used to improve the uniformity of switching parameters of RRAM, which is very simple comparing with other methods.

Efficient charge-transport in hybrid lead iodide perovskite solar cells.

Recently, highly efficient solar cells based on organic-inorganic perovskites have been intensively studied for developing fabricating methods and device structures. To improve the performance of perovskite film devices, delicate control of charge transfer material interconnectivity is required. Here, controlling the mesoporous TiO2 structure improves their charge collection and injection rate, and allows substantial enhancement of the corresponding device performance.

Enhanced photocurrent by the co-sensitization of ZnO with dye and CuInSe nanocrystals.

ZnO nanocrystals with a particle size of 20-30 nm have been synthesised for the first time using a template-free method. Chalcopyrite Cu0.28In1.

Facile synthesis of CuInGaS₂ quantum dot nanoparticles for bilayer-sensitized solar cells.

CuIn(0.7)Ga(0.3)S2 quantum dots (QDs) with particle size of 2-5 nm were directly synthesised by a vacuum one-pot-nanocasting process and homogeneously anchored on TiO2 nanocrystals (<50 nm) for the first time.