Publications by authors named "Deepam Maurya"

The transition of autonomous vehicles into fleets requires an advanced control system design that relies on continuous feedback from the tires. Smart tires enable continuous monitoring of dynamic parameters by combining strain sensing with traditional tire functions. Here, we provide breakthrough in this direction by demonstrating tire-integrated system that combines direct mask-less 3D printed strain gauges, flexible piezoelectric energy harvester for powering the sensors and secure wireless data transfer electronics, and machine learning for predictive data analysis.

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Oxide thermoelectric materials are nontoxic, chemically and thermally stable in oxidizing environments, cost-effective, and comparatively simpler to synthesize. However, thermoelectric oxides exhibit comparatively lower figure of merit () than that of metallic alloy counterparts. In this study, nanoscale texturing and interface engineering were utilized for enhancing the thermoelectric performance of oxide polycrystalline CaCoO materials, which were synthesized using conventional sintering and spark plasma sintering (SPS) techniques.

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Piezoelectric coefficients are constrained by the intrinsic crystal structure of the constituent material. Here we describe design and manufacturing routes to previously inaccessible classes of piezoelectric materials that have arbitrary piezoelectric coefficient tensors. Our scheme is based on the manipulation of electric displacement maps from families of structural cell patterns.

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Heteroepitaxial magnetoelectric (ME) composites are promising for the development of a new generation of multifunctional devices, such as sensors, tunable electronics, and energy harvesters. However, challenge remains in realizing practical epitaxial composite materials, mainly due to the interfacial lattice misfit strain between magnetostrictive and piezoelectric phases and strong substrate clamping that reduces the strain-mediated ME coupling. Here, we demonstrate a nonstrain-mediated ME coupling in PbZrTiO (PZT)/LaSrMnO (LSMO) heteroepitaxial composites that resolves these challenges, thereby, providing a giant magnetodielectric (MD) response of ∼27% at 310 K.

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Recent technological advances in developing a diverse range of lasers have opened new avenues in material processing. Laser processing of materials involves their exposure to rapid and localized energy, which creates conditions of electronic and thermodynamic nonequilibrium. The laser-induced heat can be localized in space and time, enabling excellent control over the manipulation of materials.

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Enhanced and self-biased magnetoelectric (ME) coupling is demonstrated in a laminate heterostructure comprising 4 μm-thick Pb(Zr,Ti)O (PZT) film deposited on 50 μm-thick flexible nickel (Ni) foil. A unique fabrication approach, combining room temperature deposition of PZT film by granule spray in vacuum (GSV) process and localized thermal treatment of the film by laser radiation, is utilized. This approach addresses the challenges in integrating ceramic films on metal substrates, which is often limited by the interfacial chemical reactions occurring at high processing temperatures.

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Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.

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This paper is concerned with the development of a piezoelectric shear-induced torsion actuator made of a lead-free piezoceramic material exhibiting giant piezoelectric shear stress coefficient () and piezoelectric transverse shear actuation force comparable to that of lead-based shear-mode piezoceramics. The Mn-modified 0.93(NaBiTiO)-0.

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A record-high, near-theoretical intrinsic magnetoelectric (ME) coupling of 7 V cm Oe is achieved in a heterostructure of piezoelectric Pb(Zr,Ti)O (PZT) film deposited on magnetostrictive Metglas (FeBSi). The anchor-like, nanostructured interface between PZT and Metglas, improved crystallinity of PZT by laser annealing, and optimum volume of crystalline PZT are found to be the key factors in realizing such a giant strain-mediated ME coupling.

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A rapid surge in the research on piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide piezoelectric materials with giant piezoelectric voltage coefficient (g, induced voltage under applied stress) and high Curie temperature (T) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% <001> texture) modified PbTiO ceramic that has a high T (364 °C) and an extremely large g (115 × 10 Vm N) in comparison with other known single-phase oxide materials.

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We report a novel approach for achieving high dielectric response over a wide temperature range. In this approach, multilayer ceramic heterostructures with constituent compositions having strategically tuned Curie points (T(C)) were designed and integrated with varying electrical connectivity. Interestingly, these multilayer structures exhibited different dielectric behavior in series and parallel configuration due to variations in electrical boundary conditions resulting in the differences in the strength of the electrostatic coupling.

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We report the tunable electrical response in functionally graded interfaces in lead-free ferroelectric thin films. Multilayer thin film graded heterostructures were synthesized on platinized silicon substrate with oxide layers of varying thickness. Interestingly, the graded heterostructure thin films exhibited shift of the hysteresis loops on electric field and polarization axes depending upon the direction of an applied bias.

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SrTiO3 integration on crystallographic oriented (100), (110), and (111) epitaxial germanium (Ge) exhibits a potential for a new class of nanoscale transistors. Germanium is attractive due to its superior transport properties while SrTiO3 (STO) is promising due to its high relative permittivity, both being critical parameters for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. The sharp heterointerface between STO and each crystallographically oriented Ge layer, studied by cross-sectional transmission electron microscopy, as well as band offset parameters at each heterojunction offers a significant advancement for designing a new generation of ferroelectric-germanium based multifunctional devices.

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We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films.

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Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials.

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Ferroelectric-germanium heterostructures have a strong potential for multifunctional devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while ferroelectric BaTiO3 is promising due to its high relative permittivity, which can make next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. Here, we investigate the growth, structural, chemical, and band alignment properties of pulsed laser deposited BaTiO3 on epitaxial (100)Ge, (110)Ge, and (111)Ge layers.

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Nanostructured lead-free ferroelectric Na(0.5)Bi(0.5)TiO(3)-BaTiO(3) (NBTBT) whiskers with a high aspect ratio were synthesized topochemically using Na(2)Ti(6)O(13) (NTO) as a host structure for the first time.

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Magnetoelectric (ME) composites that simultaneously exhibit ferroelectricity and ferromagnetism have recently gained significant attention as evident by the increasing number of publications. These research activities are direct results of the fact that multiferroic magnetoelectrics offer significant technological promise for multiple devices. Appropriate choice of phases with co-firing capability, magnetostriction and piezoelectric coefficient, such as Ni-PZT and NZFO-PZT, has resulted in fabrication of prototype components that promise transition.

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Bi(1-x)Sm(x)FeO(3) (x = 0.0-0.2) ceramic samples were prepared by mechanical activation assisted solid-state-reaction synthesis.

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