Electrically Controlled Excitons, Charge Transfer Induced Trions, and Narrowband Emitters in MoSe-WSe Lateral Heterostructure.

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenide heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer MoSe-WSe lateral heterostructures (LHSs). Incorporating graphene as a back gate and edge contact in a field-effect transistor geometry, we achieve the precise electrical tuning of exciton complexes and their transfer across interfaces.

Magnetism in AV_{3}Sb_{5} (A=Cs, Rb, and K): Origin and Consequences for the Strongly Correlated Phases.

The V-based kagome systems AV_{3}Sb_{5} (A=Cs, Rb, and K) are unique by virtue of the intricate interplay of nontrivial electronic structure, topology, and intriguing fermiology, rendering them to be a playground of many mutually dependent exotic phases like charge-order and superconductivity. Despite numerous recent studies, the interconnection of magnetism and other complex collective phenomena in these systems has yet not arrived at any conclusion. Using first-principles tools, we demonstrate that their electronic structures, complex fermiologies and phonon dispersions are strongly influenced by the interplay of dynamic electron correlations, nontrivial spin-polarization and spin-orbit coupling.

Correction to Stable Sulfuric Vapor Transport and Liquid-Sulfur Growth on Transition Metal Dichalcogenides.

[This corrects the article DOI: 10.1021/acs.cgd.

Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides.

Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur.

All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe/MoS pn Heterodiode.

Two-dimensional MoS gas sensors have conventionally relied on a change in field-effect-transistor (FET) channel resistance or in the Schottky contact/pn homojunction barrier. We demonstrate an enhancement in sensitivity (6×) and dynamic response along with a reduction in detection limit (8×) and power (10×) in a gate-tunable type-II WSe(p)/MoS(n) heterodiode gas sensor over an MoS FET on the same flake. Measurements for varying NO concentration, gate bias, and MoS flake thickness, reinforced with first-principles calculations, indicate dual-mode operation due to (i) a series resistance-based exponential change in the high-bias thermionic current (high sensitivity), and (ii) a heterointerface carrier concentration-based linear change in near-zero-bias interlayer recombination current (low power) resulting in sub-100 μW/cm power consumption.

Broken symmetries and the related interface-induced effects at Weyl-system TaAs in proximity of noble metals.

Weyl semimetal TaAs, congenially accommodating the massless Weyl fermions, furnishes a platform to observe a spontaneous breaking of either the time-reversal or the inversion symmetry and the concurrent genesis of pairs of Weyl nodes with significant topological durability. Former experimental analysis, which reveals that the near-zero spin-polarization of bulk TaAs, experiences a boost in proximity of point-contacts of non-magnetic metals along with the associated tip-induced superconductivity, provides the impetus to study the large-area stacked interfaces of TaAs with noble metals like Au and Ag. The primary outcomes of the present work can be listed as follows: (1) First-principles calculations on the interfacial systems have manifested an increment of the interface-induced spin-polarization and contact-induced transport spin-polarization of TaAs in proximity of noble metals; (2) In contrast to the single interface, for vertically stacked cases, the broken inversion symmetry of the system introduces a z-directional band-dispersion, resulting in an energetically separated series of non-degenerate band crossings.

Combinatorial Large-Area MoS/Anatase-TiO Interface: A Pathway to Emergent Optical and Optoelectronic Functionalities.

The interface of transition-metal dichalcogenides (TMDCs) and high- dielectric transition-metal oxides (TMOs) had triggered umpteen discourses because of the indubitable impact of TMOs in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser-deposited MoS thin film, a layer of TiO is grown by atomic layer deposition (ALD) and pulsed laser deposition (PLD).

Intriguing electronic and optical prospects of FCC bimetallic two-dimensional heterostructures: epsilon near-zero behavior in UV-Vis range.

A higher superconducting critical temperature and large-area epsilon-near-zero systems are two long-standing goals of the scientific community, having an explicit relationship with the correlated electrons in localized orbitals. Motivated by the recent experimental findings of the strongly correlated phenomena in nanostructures of simple Drude metallic systems, we have theoretically investigated some potential bimetallic FCC combinations having close resemblance with the experimental systems. The explored systems include the large-area interface to the embedded and doped two-dimensional (2D) combinatorial nanostructures.

Sensitized ZnO nanorod assemblies to detect heavy metal contaminated phytomedicines: spectroscopic and simulation studies.

The immense pharmacological relevance of the herbal medicine curcumin including anti-cancer and anti-Alzheimer effects, suggests it to be a superior alternative to synthesised drugs. The diverse functionalities with minimal side effects intensify the use of curcumin not only as a dietary supplement but also as a therapeutic agent. Besides all this effectiveness, some recent literature reported the presence of deleterious heavy metal contaminants from various sources in curcumin leading to potential health hazards.

Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2.

Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.

We demonstrate a low and constant effective Schottky barrier height (ΦB ∼ 40 meV) irrespective of the metal work function by introducing an ultrathin TiO2 ALD interfacial layer between various metals (Ti, Ni, Au, and Pd) and MoS2. Transmission line method devices with and without the contact TiO2 interfacial layer on the same MoS2 flake demonstrate reduced (24×) contact resistance (RC) in the presence of TiO2. The insertion of TiO2 at the source-drain contact interface results in significant improvement in the on-current and field effect mobility (up to 10×).

Manifestation of long-range ordered state in layered VX2 (X = Cl, Br, I) systems.

We report the first-principles based density functional investigation of correlated magnetic behavior for the layered VX2 (X = Cl, Br, I) system both in bulk and monolayer forms. The bulk system stabilizes in the Néel 120° spin structure with the onset of long-range order at a very low temperature. However, a monolayer of the same system results in a two-dimensional long-range ordered spin-gel configuration in the a-b plane.

High pressure structural and vibrational properties of the spin-gap system Cu2PO4(OH).

The structural and vibrational properties of the spin-gapped system Cu(2)PO(4)(OH) have been investigated at room temperature under high pressure up to ~20 GPa by Raman scattering and synchrotron-based x-ray diffraction and infrared (IR) spectroscopic measurements. The orthorhombic phase (space group Pnnm, z = 4) remains stable up to at least 7 GPa where it undergoes a weakly first order structural transition (with negligible volume drop) to a monoclinic phase (space group P2(1)/n, z = 4) with an abrupt monoclinic distortion. Refinement of atomic positions has been performed for the low pressure phase.

Spin interactions in mineral libethenite series: evolution of low-dimensional magnetism.

Interesting magnetic properties and spin-exchange interactions along various possible pathways in the half-integral spin quantum magnetic tetramer system: A(2)PO(4)OH (A=Co, Cu) are investigated. Interplay of structural distortion and the magnetic properties with the evolution of localized band structure explain the gradual transition from a three-dimensional antiferromagnet to a low-dimensional frustrated magnetic system along the series. A detailed study of the exchange mechanism in this system explores various possibilities of complex magnetic interaction.