On two new species of the genus Ctenolepisma (Zygentoma: Lepismatidae) from India.

Two new species of the genus Ctenolepisma Escherich, 1905 are described from Andhra Pradesh and Tamil Nadu, India: Ctenolepisma (Ctenolepisma) venkataramani sp. n. and Ctenolepisma (Ctenolepisma) udumalpetense sp.

Piper betle leaf extract affects the quorum sensing and hence virulence of Pseudomonas aeruginosa PAO1.

Quorum sensing (QS) plays an important role in virulence of Pseudomonas aeruginosa, blocking of QS ability are viewed as viable antimicrobial chemotherapy and which may prove to be a safe anti-virulent drug. Bioactive components from Piper betle have been reported to possess antimicrobial ability. This study envisages on the anti-QS properties of ethanolic extract of P.

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure.

It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale Res. Lett.

Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.

RRAM characteristics using a new Cr/GdOx/TiN structure.

Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study.

Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure consists of an inert electrode and one oxidized electrode of copper (Cu) or silver (Ag). The switching mechanism is the formation/dissolution of a metallic filament in the switching materials under external bias.

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO /TiO /TiN Structure.

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO /TiO /TiN structure for the first time. Transmission electron microscope image confirmed a via-hole size of 0.4 µm.

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.

A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of <5 V and a high-current-carrying conductor of >70 mA is obtained.

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.

Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN structure are reported for the first time. A high-resolution transmission electron microscope (HRTEM) image shows an amorphous TaO x layer with a thickness of 7 nm. A thin layer of TiO x N y with a thickness of 3 nm is formed at the TaO x /TiN interface, owing to the oxygen accumulation nature of Ti.

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.

Enhanced resistive switching phenomena of IrOx/GdOx/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd2O3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.

Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.

Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operation of ±2.

TaOx-based resistive switching memories: prospective and challenges.

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states.

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.

Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy.