First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica.

The structural parameters, electron localization functions, electron paramagnetic resonance (EPR) parameters, formation energies, and thermodynamic transition levels of various oxygen vacancy defects in amorphous silica are comprehensively and integrally investigated by using density functional theory. The trends of changes in the oxygen vacancy defect structure and electron localization induced by the increase in distance between defective silicon atoms are clearly identified. It is shown that the dimer configuration may be the potential structure of the Eδ' center.

Theoretical insights into volatile iodine adsorption onto COF-DL229.

COF-DL229 is one of the promising sorbents for the capture of volatile radioiodine due to its large adsorption capacity. However, the interaction mechanism between them remains unclear. In the present work, the adsorption of volatile iodine onto COF-DL229 was systematically investigated using periodic density functional theory and crystal orbital Hamilton population calculations.

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations.

Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen interstitial in GaN material, including the configuration, migration, and interaction with vacancy were systematically investigated in the present work. By introducing different sites of foreign nitrogen atom, the most stable configuration of nitrogen interstitial was calculated to show a threefold symmetry in each layer and different charge states were characterized, respectively.