Thick waveguides of low-stress stoichiometric silicon nitride on sapphire (SiNOS).

Low-stress stoichiometric silicon nitride (SiN) waveguides with an unprecedented thickness of up to 1350 nm and a width in the range of 2.2 - 2.7 µm are fabricated using a single LPCVD step on sapphire substrates (SiNOS).

Octave-spanning supercontinuum generation in a CMOS-compatible thin SiN waveguide coated with highly nonlinear TeO.

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (SiN) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the SiN waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm SiN platform using a highly nonlinear tellurium oxide (TeO) coating.

Hybrid silicon-tellurium-dioxide DBR resonators coated in PMMA for biological sensing.

We report on silicon waveguide distributed Bragg reflector (DBR) cavities hybridized with a tellurium dioxide (TeO) cladding and coated in plasma functionalized poly (methyl methacrylate) (PMMA) for label free biological sensors. We describe the device structure and fabrication steps, including reactive sputtering of TeO and spin coating and plasma functionalization of PMMA on foundry processed Si chips, as well as the characterization of two DBR designs via thermal, water, and bovine serum albumin (BSA) protein sensing. Plasma treatment on the PMMA films was shown to decrease the water droplet contact angle from ∼70 to ∼35°, increasing hydrophilicity for liquid sensing, while adding functional groups on the surface of the sensors intended to assist with immobilization of BSA molecules.

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching.

We report on the fabrication and optical characterization of erbium-ytterbium co-doped aluminum oxide (AlO:Er:Yb) waveguides using low-cost, low-temperature deposition and etching steps. We deposited AlO:Er:Yb films using reactive co-sputtering, with Er and Yb ion concentrations ranging from 1.4-1.

Low-loss TeO-coated SiN waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the SiN strip height and width and TeO layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO can be obtained.

A Tellurium Oxide Microcavity Resonator Sensor Integrated On-Chip with a Silicon Waveguide.

We report on thermal and evanescent field sensing from a tellurium oxide optical microcavity resonator on a silicon photonics platform. The on-chip resonator structure is fabricated using silicon-photonics-compatible processing steps and consists of a silicon-on-insulator waveguide next to a circular trench that is coated in a tellurium oxide film. We characterize the device's sensitivity by both changing the temperature and coating water over the chip and measuring the corresponding shift in the cavity resonance wavelength for different tellurium oxide film thicknesses.