A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration.

The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III-V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities.