Transition voltages respond to synthetic reorientation of embedded dipoles in self-assembled monolayers.

We studied the influence of embedded dipole moments in self-assembled monolayers (SAMs) formed on template stripped Au surfaces with liquid eutectic Ga-In alloy as a top electrode. We designed three molecules based on a -terphenyl structure in which the central aromatic ring is either phenyl or a dipole-inducing pyrimidyl in one of two different orientations. All three form well defined SAMs with similar thickness, packing density and tilt angle, with dipole moments embedded in the SAM, isolated from either interface.

Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom.

The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a four-fold increase of the dielectric constant (ε r ) with increasing polarizability of X are found.

Evidence for quantum interference in SAMs of arylethynylene thiolates in tunneling junctions with eutectic Ga-In (EGaIn) top-contacts.

This paper compares the current density (J) versus applied bias (V) of self-assembled monolayers (SAMs) of three different ethynylthiophenol-functionalized anthracene derivatives of approximately the same thickness with linear-conjugation (AC), cross-conjugation (AQ), and broken-conjugation (AH) using liquid eutectic Ga-In (EGaIn) supporting a native skin (~1 nm thick) of Ga(2)O(3) as a nondamaging, conformal top-contact. This skin imparts non-Newtonian rheological properties that distinguish EGaIn from other top-contacts; however, it may also have limited the maximum values of J observed for AC. The measured values of J for AH and AQ are not significantly different (J ≈ 10(-1)A/cm(2) at V = 0.