Chemical manipulation of hydrogen induced high p-type and n-type conductivity in GaO.

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-GaO, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping.