Here we consider a tunable superconducting cavity that can be used either as a tunable coupler to a qubit inside the cavity or as a tunable low noise, low temperature, RF filter. Our design consists of an array of radio-frequency superconducting quantum interference devices (rf SQUIDs) inside a superconducting cavity. This forms a tunable metamaterial structure which couples to the cavity through its magnetic plasma frequency.
View Article and Find Full Text PDFWe present a single pixel terahertz (THz) imaging technique using optical photoexcitation of semiconductors to dynamically and spatially control the electromagnetic properties of a semiconductor mask to collectively form a THz spatial light modulator (SLM). By co-propagating a THz and collimated optical laser beam through a high-resistivity silicon wafer, we are able to modify the THz transmission in real-time. By further encoding a spatial pattern on the optical beam with a digital micro-mirror device (DMD), we may write masks for THz radiation.
View Article and Find Full Text PDFWe present an experimental demonstration of electronically tunable metamaterial absorbers in the terahertz regime. By incorporation of active liquid crystal into strategic locations within the metamaterial unit cell, we are able to modify the absorption by 30% at 2.62 THz, as well as tune the resonant absorption over 4% in bandwidth.
View Article and Find Full Text PDFWe present a metamaterial absorber detector array that enables room-temperature, narrow-band detection of gigahertz (GHz) radiation in the S band (2-4 GHz). The system is implemented in a commercial printed circuit board process and we characterize the detector sensitivity and angular dependence. A modified metamaterial absorber geometry allows for each unit cell to act as an isolated detector pixel and to collectively form a focal plane array .
View Article and Find Full Text PDFWe present a computational and experimental study of a novel terahertz (THz) device resulting from hybridization of metamaterials with pseudomorphic high electron mobility transistors (HEMTs), fabricated in a commercial gallium arsenide (GaAs) process. Monolithic integration of transistors into each unit cell permits modulation at the metamaterial resonant frequency of 0.46 THz.
View Article and Find Full Text PDFPhase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin.
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