Publications by authors named "David Seidman"

An unconventional "heteromorphic" superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconducting pc-In O layers interleaved with insulating a-MoO layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high-mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL.

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  • This study investigates the creep behavior and precipitation in specific alloys with and without L1-forming elements like Zr and Er at varying temperatures (275-400 °C).
  • The alloy shows significantly high creep resistance in its peak-aged state, especially when compared to similar alloys lacking manganese, with creep threshold stresses at 300 °C being about three times higher.
  • Advanced microscopy techniques reveal the presence of nanoscale and micron-sized precipitates, while the solute interactions in the Al matrix contribute to this enhanced creep resistance through mechanisms involving dislocation and solute elastic interactions.
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  • - Precipitation strengthening is analyzed in alloys with and without Sn micro-additions, showing that adding 0.02 at.% Sn significantly improves age-hardening, achieving a hardening increment of 125 MPa at peak-aging (475 °C), five times more than the Sn-free alloy.
  • - Microscopy analyses indicate that while the -Al(Mn,Fe)Si precipitates in both alloys have the same structure, the Sn-modified alloy has smaller precipitate size and a higher number density, attributed to Sn-rich nanoprecipitates acting as nucleation sites.
  • - The enhanced dispersion of the Mn-Si-rich nanoprecipitates, which exhibit unique quasicrystal ordering, leads to greater creep
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Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC).

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Atom-probe tomography (APT) facilitates nano- and atomic-scale characterization and analysis of microstructural features. Specifically, APT is well suited to study the interfacial properties of granular or heterophase systems. Traditionally, the identification of the interface between, for precipitate and matrix phases, in APT data has been obtained either by extracting iso-concentration surfaces based on a user-supplied concentration value or by manually perturbing the concentration value until the iso-concentration surface qualitatively matches the interface.

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Semiconducting nanowires are widely studied as building blocks for electro-optical devices; however, their limited cross-section and hence photo-response hinder the utilization of their full potential. Herein, we present an opto-electronic device for broad spectral detection ranging from the visible (VIS) to the short wavelength infra-red (SWIR) regime, using SiGe nanowires coupled to a broadband plasmonic antenna. The plasmonic amplification is obtained by deposition of a metallic nanotip at the edge of a nanowire utilizing a bottom-up synthesis technique.

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Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, and drive growth of self-assembled nanostructures. Understanding strain-energy relaxation mechanisms including phase transformations, dislocation nucleation and migration, and fracturing is essential to both exploit this degree of freedom and avoid degradation of carrier lifetime and mobility, particularly in prestrained electronic devices and flexible electronics that undergo large changes in strain during operation. Raman spectroscopy, high-resolution transmission electron microscopy, and electron diffraction are utilized to identify strain-energy release mechanisms of bent diamond-cubic silicon (Si) and zinc-blende GaAs nanowires, which were elastically strained to >6% at room temperature and then annealed at an elevated temperature to activate relaxation mechanisms.

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Some articles have revealed that the electrodeposition of calcium phosphate (CaP) coatings entails a precursor phase, similarly to biomineralization in vivo. The chemical composition of the initial layer and its thickness are, however, still arguable, to the best of our knowledge. Moreover, while CaP and electrodeposition of metal coatings have been studied utilizing atom-probe tomography (APT), the electrodeposition of CaP ceramics has not been heretofore studied.

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Large-scale assembly of individual atoms over smooth surfaces is difficult to achieve. A configuration of an atom reservoir, in which individual atoms can be readily extracted, may successfully address this challenge. In this work, we demonstrate that a liquid gold-silicon alloy established in classical vapor-liquid-solid growth can deposit ordered and three-dimensional rings of isolated gold atoms over silicon nanowire sidewalls.

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Metal nanoparticle arrays are excellent candidates for a variety of applications due to the versatility of their morphology and structure at the nanoscale. Bottom-up self-assembly of metal nanoparticles provides an important complementary alternative to the traditional top-down lithography method and makes it possible to assemble structures with higher-order complexity, for example, nanospheres, nanocubes, and core-shell nanostructures. Here we present a mechanism study of the self-assembly process of 1-D noble metal nanoparticles arrays, composed of Au, Ag, and AuAg alloy nanoparticles.

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Atom-probe tomography (APT) is a unique analysis tool that enables true three-dimensional (3-D) analyses with sub-nano scale spatial resolution. Recent implementations of the local-electrode atom-probe (LEAP) tomograph with ultraviolet laser pulsing have significantly expanded the research applications of APT. The small field-of-view of a needle-shaped specimen with a less than 100 nm diam.

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Atom-probe tomography (APT) is a powerful method for characterization of nanomaterials due to its atomic-ppm level detection limit and Angstrom spatial resolution. Sample preparation for nanomaterials is, however, challenging because of their small dimensions and complicated geometries. Nanowires, with their high geometrical aspect ratio and nanowire length, 10 to 100 times their typical diameters, are highly suitable specimens for APT analyses, which can be transferred to silicon microposts using a nanomanipulator for direct APT measurements.

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Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires.

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The dimensionless figure of merit, ZT, of bulk thermoelectric materials depends mainly on the transport properties of charge carriers and heat-carrying phonons. PbTe-4 mol % SrTe doped with 2 mol % Na (PbNaSrTe) is a nanostructured material system that exhibits a ZT higher than 2. The precipitate size distribution of SrTe precipitates is believed to play a key role.

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The rafting of monocrystalline Ni- and Co-based superalloys has been studied by neutron diffractometry. Lattice parameter misfit values and the difference in phase stiffnesses at room temperature, , and are presented. These microstructural parameters should assist in refining computer models that aim to predict precipitate evolution in superalloys and aid future alloy design.

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This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe tomography, and the application of this latter technique in place of FIM has unfortunately severely limited further FIM development.

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causes bovine anaplasmosis, a debilitating and potentially fatal tick-borne infection of cattle. Because is an obligate intracellular organism, its adhesins that mediate entry into host cells are essential for survival. Here, we demonstrate that outer membrane protein A (AmOmpA; AM854) contributes to the invasion of mammalian and tick host cells.

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The effects of micro-additions of boron and zirconium on grain-boundary (GB) structure and strength in polycrystalline γ(f.c.c.

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Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires.

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Silicon-based materials have widespread application as biophysical tools and biomedical devices. Here we introduce a biocompatible and degradable mesostructured form of silicon with multi-scale structural and chemical heterogeneities. The material was synthesized using mesoporous silica as a template through a chemical vapour deposition process.

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  • This research used ultraviolet laser-assisted atom-probe tomography (APT) to study how aluminum impurities behave at the atomic level in thin layers of silicon, revealing that aluminum concentrations far exceed normal limits.
  • The study found that aluminum atoms precipitate into small nanoscopic structures when oxygen is also present, indicating a significant interaction between aluminum and oxygen in the silicon matrix.
  • First-principles calculations support the findings by showing strong binding energies between aluminum and oxygen atoms, confirming the formation of aluminum-oxygen complexes in the precipitates.
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It addition to its high evaporation field, diamond is also known for its limited photoabsorption, strong covalent bonding, and wide bandgap. These characteristics have been thought for long to also complicate the field evaporation of diamond and make its control hardly achievable on the atomistic-level. Herein, we demonstrate that the unique behavior of nanoscale diamond and its interaction with pulsed laser lead to a controlled field evaporation thus enabling three-dimensional atom-by-atom mapping of diamond (12)C/(13)C homojunctions.

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The properties and growth processes of graphene are greatly influenced by the elemental distributions of impurity atoms and their functional groups within or on the hexagonal carbon lattice. Oxygen and hydrogen atoms and their functional molecules (OH, CO, and CO2 ) positions' and chemical identities are tomographically mapped in three dimensions in a graphene monolayer film grown on a copper substrate, at the atomic part-per-million (atomic ppm) detection level, employing laser assisted atom-probe tomography. The atomistic plan and cross-sectional views of graphene indicate that oxygen, hydrogen, and their co-functionalities, OH, CO, and CO2 , which are locally clustered under or within the graphene lattice.

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Anaplasma phagocytophilum is an obligate intracellular bacterium that causes the emerging infection, granulocytic anaplasmosis. While electroporation can transform A. phagocytophilum isolated from host cells, no method has been developed to transform it while growing inside the ApV (A.

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The preparation of transmission electron microcopy (TEM) samples from powders with particle sizes larger than ~100 nm poses a challenge. The existing methods are complicated and expensive, or have a low probability of success. Herein, we report a modified methodology for preparation of TEM samples from powders, which is efficient, cost-effective, and easy to perform.

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