Quantitative electrochemical measurements using in situ ec-S/TEM devices.

Insight into dynamic electrochemical processes can be obtained with in situ electrochemical-scanning/transmission electron microscopy (ec-S/TEM), a technique that utilizes microfluidic electrochemical cells to characterize electrochemical processes with S/TEM imaging, diffraction, or spectroscopy. The microfluidic electrochemical cell is composed of microfabricated devices with glassy carbon and platinum microband electrodes in a three-electrode cell configuration. To establish the validity of this method for quantitative in situ electrochemistry research, cyclic voltammetry (CV), choronoamperometry (CA), and electrochemical impedance spectroscopy (EIS) were performed using a standard one electron transfer redox couple [Fe(CN)6]3-/4--based electrolyte.

Novel MEMS-based gas-cell/heating specimen holder provides advanced imaging capabilities for in situ reaction studies.

In prior research, specimen holders that employ a novel MEMS-based heating technology (Aduro™) provided by Protochips Inc. (Raleigh, NC, USA) have been shown to permit sub-Ångström imaging at elevated temperatures up to 1,000°C during in situ heating experiments in modern aberration-corrected electron microscopes. The Aduro heating devices permit precise control of temperature and have the unique feature of providing both heating and cooling rates of 10⁶°C/s.

Controllable molecular modulation of conductivity in silicon-based devices.

The electronic properties of silicon, such as the conductivity, are largely dependent on the density of the mobile charge carriers, which can be tuned by gating and impurity doping. When the device size scales down to the nanoscale, routine doping becomes problematic due to inhomogeneities. Here we report that a molecular monolayer, covalently grafted atop a silicon channel, can play a role similar to gating and impurity doping.

A new MEMS-based system for ultra-high-resolution imaging at elevated temperatures.

In recent years, an increasing number of laboratories have been applying in situ heating (and ultimately, gas reaction) techniques in electron microscopy studies of catalysts and other nanophase materials. With the advent of aberration-corrected electron microscopes that provide sub-Angström image resolution, it is of great interest to study the behavior of materials at elevated temperatures while maintaining the resolution capabilities of the microscope. In collaboration with Protochips Inc.

An improved holey carbon film for cryo-electron microscopy.

Two issues that often impact the cryo-electron microscopy (cryoEM) specimen preparation process are agglomeration of particles near hole edges in holey carbon films and variations in vitreous ice thickness. In many cases, the source of these issues was identified to be the residues and topography often seen in commercially available films. To study and minimize their impact during specimen preparation, an improved holey carbon film has been developed.

Controlled modulation of conductance in silicon devices by molecular monolayers.

We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules.

Scaling constraints in nanoelectronic random-access memories.

Nanoelectronic molecular and magnetic tunnel junction (MTJ) MRAM crossbar memory systems have the potential to present significant area advantages (4 to 6F(2)) compared to CMOS-based systems. The scalability of these conductivity-switched RAM arrays is examined by establishing criteria for correct functionality based on the readout margin. Using a combined circuit theoretical modelling and simulation approach, the impact of both the device and interconnect architecture on the scalability of a conductivity-state memory system is quantified.

Clustering effects on discontinuous gold film NanoCells.

Reproducible negative differential resistance (NDR)-like switching behavior is observed in NanoCells. This behavior is attributed to the formation of filaments and clusters between the discontinuous gold films. Control experiments are performed by self-assembly of insulating molecules between the gold islands and conducting molecules on these islands.

NanoCell electronic memories.

NanoCells are disordered arrays of metallic islands that are interlinked with molecules between micrometer-sized metallic input/output leads. In the past, simulations had been conducted showing that the NanoCells may function as both memory and logic devices that are programmable postfabrication. Reported here is the first assembly of a NanoCell with disordered arrays of molecules and Au islands.