Interference Lithography (IL) is a powerful and inexpensive tool for large area precision nanoscale patterning of periodic structures. In this work we extend IL's capability to create features in arbitrary shapes and locations through the use of binary contact masks with wavefront division deep-UV interference lithography. Grating couplers for use in a streak measurement system and a focal plane division polarimeter are created to demonstrate the viability and versatility of the technique.
View Article and Find Full Text PDFWe report the design, fabrication and characterization of a 1-by-5 geometric-phase polarization fan-out grating for coherent beam combining at 1550 nm. The phase profile of the grating is accurately controlled by the local orientation of the binary subwavelength structure instead of the etching depth and profile empowering the grating to be more tolerant to fabrication errors. Deep-UV interference lithography on silicon offers an inexpensive, highly efficient and high damage threshold solution to fabricating large-area fan-out gratings than electron beam lithography (EBL) and photoalignment liquid crystals.
View Article and Find Full Text PDFWe demonstrate controlled wavelength conversion on a silicon chip based on four-wave mixing Bragg scattering (FWM-BS). A total conversion efficiency of 5% is achieved with strongly unbalanced pumps and a controlling peak power of 55 mW, while the efficiency is over 15% when using less asymmetric pumps. The numerical simulation agrees with the experimental results.
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