Vanadium Dioxide by Atomic Layer Deposition: A Promising Material for Next-Generation Memory Devices.

The synthesis of a vanadium dioxide (VO) film using atomic layer deposition (ALD) with vanadium tetrachloride (VCl) as a precursor for the realization of programmable memory devices is reported. X-ray diffraction analysis revealed the epitaxial growth of VO on c-AlO. The phase transition was monitored using resistivity measurements across varying temperatures, demonstrating a decrease of >4 orders of magnitude at the transition temperature, thereby confirming the high quality of the material.

Effect of the AlO Deposition Method on Parylene C: Highlights on a Nanopillar-Shaped Surface.

Parylene C (PC) has attracted tremendous attention throughout the past few years due to its extraordinary properties such as high mechanical strength and biocompatibility. When used as a flexible substrate and combined with high-κ dielectrics such as aluminum oxide (AlO), the AlO/PC stack becomes very compelling for various applications in fields such as biomedical microsystems and microelectronics. For the latter, the atomic layer deposition of oxides is particularly needed as it allows the deposition of high-quality and nanometer-scale oxide thicknesses.

Imaging the operation of a carbon nanotube charge sensor at the nanoscale.

Carbon nanotube field effect transistors (CNTFETs) are of great interest for nanoelectronics applications such as nonvolatile memory elements (NVMEs) or charge sensors. In this work, we use a scanning-probe approach based on a local charge perturbation of CNTFET-based NVMEs and investigate their fundamental operation from combined transport, electrostatic scanning probe techniques and atomistic simulations. We experimentally demonstrate operating devices with threshold voltages shifts opposite to conventional gating and with almost unchanged hysteresis.