Bandstructure engineering using alloying is widely utilized for achieving optimized performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, heterobilayers made from monolayers of WSe (or MoSe) and MoWSe alloy are fabricated and nontrivial tuning of the resultant bandstructure is observed as a function of concentration x.
View Article and Find Full Text PDFMoiré superlattices of two-dimensional heterostructures arose as a new platform to investigate emergent behaviour in quantum solids with unprecedented tunability. To glean insights into the physics of these systems, it is paramount to discover new probes of the moiré potential and moiré minibands, as well as their dependence on external tuning parameters. Hydrostatic pressure is a powerful control parameter, since it allows to continuously and reversibly enhance the moiré potential.
View Article and Find Full Text PDFAn Amendment to this paper has been published and can be accessed via a link at the top of the paper.
View Article and Find Full Text PDFAtomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moiré superlattice. In graphene/hexagonal boron nitride structures, the presence of a moiré superlattice can lead to the observation of electronic minibands, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor-insulator transition at magic twist angles.
View Article and Find Full Text PDFThe science and applications of electronics and optoelectronics have been driven for decades by progress in the growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions.
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