Vibrational and electronic heating in nanoscale junctions.

Understanding and controlling the flow of heat is a major challenge in nanoelectronics. When a junction is driven out of equilibrium by light or the flow of electric charge, the vibrational and electronic degrees of freedom are, in general, no longer described by a single temperature. Moreover, characterizing the steady-state vibrational and electronic distributions in situ is extremely challenging.

Kinetics of diazonium functionalization of chemically converted graphene nanoribbons.

We demonstrate that graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes can be chemically functionalized by diazonium salts. We show that functional groups form a thin layer on a GNR and modify its electrical properties. The kinetics of the functionalization can be monitored by probing the electrical properties of GNRs, either in vacuum after the grafting, or in situ in the solution.

Two-terminal molecular memories from solution-deposited C60 films in vertical silicon nanogaps.

We demonstrate here two-terminal, charge-based memory from C60 films inside vertical 7 nm silicon nanogap devices. This testbed structure eliminated the possibility of metal migration in the nanostructure because the two electrodes are made solely of silicon; hence, the often troublesome and confusing possibility of filamentary metal formation is obviated. Saturated solutions of C60 in toluene, mesitylene, and 1-methylnaphthalene were each used to deposit these films at elevated temperatures.

Controllable molecular modulation of conductivity in silicon-based devices.

The electronic properties of silicon, such as the conductivity, are largely dependent on the density of the mobile charge carriers, which can be tuned by gating and impurity doping. When the device size scales down to the nanoscale, routine doping becomes problematic due to inhomogeneities. Here we report that a molecular monolayer, covalently grafted atop a silicon channel, can play a role similar to gating and impurity doping.

Silicon/molecule interfacial electronic modifications.

Electronic structures at the silicon/molecule interface were studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, inverse photoemission spectroscopy, and Kelvin probe techniques. The heterojunctions were fabricated by direct covalent grafting of a series of molecules (-C6H4-X, with X = NMe2, NH2, NO2, and Mo6 oxide cluster) onto the surface of four types of silicon substrates (both n- and p-type with different dopant densities). The electronic structures at the interfaces were thus systematically tuned in accordance with the electron-donating ability, redox capability, and/or dipole moment of the grafted molecules.

Viscosity dependence of the denitrogenation quantum yield in azoalkane photolysis: experimental evidence for reversible formation of the diazenyl diradical.

[reaction: see text] Experimental evidence is reported for the reversible formation of the singlet diazenyl diradical ((1)DZ), photolytically generated from the structurally elaborate DBH-type azoalkane. Reversiblity of the (1)DZ formation manifests itself through the decrease of the photodenitrogenation quantum yield over a ca. 40-fold viscosity variation (from 0.