[Issues and challenges of primary care medicine: The Northern Vaud Project].

On the face of challenges, particularly related to population aging, increasing complexity of medicine, demographic changes, and uneven geographical distribution of general practitioners (GPs), the healthcare system needs to be reimagined to ensure and maintain efficient care and address the chronic burden on emergency services. A concept of integrated community-based continuity of care, aimed at training future GPs, is one of the solutions proposed by the Northern Vaud Hospital Institutions. This project contributes to strengthening the interface and transition between the hospital and community medicine.

Birth Weight and the Development of Functional Gastrointestinal Disorders in Infants.

Purpose: To assess the association between birth weight and the development of functional gastrointestinal disorders (FGIDs) in the first year of life.

Methods: This is a secondary analysis of a prospective cohort multicenter study including neonates, consecutively enrolled at birth, and followed up for one year. At birth all infants were classified by birth weight as extremely low (ELBW), very low, or low when <1,000, <1,500, and <2,500 g, respectively, and by birth weight for gestational age as appropriate (AGA, weight in the 10-90th percentile), small (SGA, weight <10th percentile), and large (LGA, weight >90th percentile) for gestational age.

Neonatal Antibiotics and Prematurity Are Associated with an Increased Risk of Functional Gastrointestinal Disorders in the First Year of Life.

Objective: To assess the prevalence of functional gastrointestinal disorders (FGIDs) in the first year of life and the influence of different neonatal factors on development of FGIDs.

Study Design: A prospective cohort multicenter study including neonates, consecutively enrolled at birth, and followed up until 1 year. Gestational age, neonatal antibiotic administration, duration of hospitalization, mode of delivery, birth weight, and feeding pattern were recorded.

Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition.

Graphene-boron nitride monolayer heterostructures contain adjacent electrically active and insulating regions in a continuous, single-atom thick layer. To date structures were grown at low pressure, resulting in irregular shapes and edge direction, so studies of the graphene-boron nitride interface were restricted to the microscopy of nanodomains. Here we report templated growth of single crystalline hexagonal boron nitride directly from the oriented edge of hexagonal graphene flakes by atmospheric pressure chemical vapor deposition, and physical property measurements that inform the design of in-plane hybrid electronics.

Tin oxide nanowire sensor with integrated temperature and gate control for multi-gas recognition.

The selectivity of a chemiresistive gas sensor comprising an array of single-crystalline tin oxide nanowires (NWs) is shown to be greatly enhanced by combined temperature and gate voltage modulation. This dual modulation was effected by a novel microsensor platform that consisted of a suspended nitride membrane embedded with independently addressable platinum heater and back-gate structures. The sensor was evaluated in a chemical vapor exposure test consisting of three volatile organic compound (VOC) analytes in an air background; VOC concentrations ranged from 20 μmol/mol to 80 μmol/mol.

Organic vapor discrimination with chemiresistor arrays of temperature modulated tin-oxide nanowires and thiolate-monolayer-protected gold nanoparticles.

This paper explores the discrimination of organic vapors with arrays of chemiresistors (CRs) employing interface layers of tin-oxide nanowires (NWs) and thiolate-monolayer-protected gold nanoparticles (MPNs). The former devices use contact-printed mats of NWs on micro-hotplate membranes to bridge a pair of metal electrodes. Oxidation at the NW surface causes changes in charge transport, the temperature dependence of which differs among different vapors, permitting vapor discrimination.

Fully transparent thin-film transistor devices based on SnO2 nanowires.

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio.

High-performance transparent conducting oxide nanowires.

We report the growth and characterization of single-crystalline Sn-doped In2O3 (ITO) and Mo-doped In2O3 (IMO) nanowires. Epitaxial growth of vertically aligned ITO nanowire arrays was achieved on ITO/yttria-stabilized zirconia (YSZ) substrates. Optical transmittance and electrical transport measurements show that these nanowires are high-performance transparent metallic conductors with transmittance of approximately 85% in the visible range, resistivities as low as 6.