GaAs x-ray detectors with sub-nanosecond temporal response.

Fast semiconductor radiation detectors operated in current mode provide a valuable diagnostic in pulsed power applications. Si detectors are common due to the availability of high-quality materials and mature fabrication processes, but they offer low absorption for hard x-rays above ∼10 keV. GaAs can provide increased hard x-ray absorption for the same detector volume due to a higher atomic number.

Compact epsilon-near-zero silicon photonic phase modulators.

In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process.

Micromachined Accelerometers With Optical Interferometric Read-Out and Integrated Electrostatic Actuation.

A micromachined accelerometer device structure with diffraction-based optical detection and integrated electrostatic actuation is introduced. The sensor consists of a bulk silicon proof mass electrode that moves vertically with respect to a rigid diffraction grating backplate electrode to provide interferometric detection resolution of the proof-mass displacement when illuminated with coherent light. The sensor architecture includes a monolithically integrated electrostatic actuation port that enables the application of precisely controlled broadband forces to the proof mass while the displacement is simultaneously and independently measured optically.