Resistive switching and battery-like characteristics in highly transparent TaO/ITO thin-films.

Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-TaO) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-TaO.