Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.

Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance.