Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications.

The Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena. In this study, contactless electroreflectance (CER) was utilized for the first time to investigate the built-in electric field in MXene/GaN structures with the goal of understanding the carrier transfer across the MXene/GaN interface. Five MXenes with high work functions were examined: CrC, MoC, VC, VC, and TiC.

Waveguide-Coupled Light Photodetector Based on Two-Dimensional Molybdenum Disulfide.

The integration of transition metal dichalcogenides with photonic structures such as sol-gel SiO:TiO optical waveguides (WGs) makes possible the fabrication of photonic devices with the desired characteristics in the visible spectral range. In this study, we propose and experimentally demonstrate a MoS-based photodetector integrated with a sol-gel SiO:TiO WG. Based on the spectroscopic measurements performed for our device, we concluded that the light entering the WG is almost completely channeled out from the WG and absorbed by the MoS flake, which is deposited on the WG.

Stability of mechanically exfoliated layered monochalcogenides under ambient conditions.

Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored.