Large-Scale Direct Growth of Monolayer MoS on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits.

Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS) crystals on patterned graphene channels.

High current treated-passivated graphene (CTPG) towards stable nanoelectronic and spintronic circuits.

Achieving enhanced and stable electrical quality of scalable graphene is crucial for practical graphene device applications. Accordingly, encapsulation has emerged as an approach for improving electrical transport in graphene. In this study, we demonstrate high-current treatment of graphene passivated by AlO nanofilms as a new means to enhance the electrical quality of graphene for its scalable utilization.

Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions: application to electrical contacts on graphene, magnetism and hard masking.

Emergent technologies are required in the field of nanoelectronics for improved contacts and interconnects at nano and micro-scale. In this work, we report a highly-efficient nanolithography process for the growth of cobalt nanostructures requiring an ultra-low charge dose (15 μC cm, unprecedented in single-step charge-based nanopatterning). This resist-free process consists in the condensation of a ∼28 nm-thick Co(CO) layer on a substrate held at -100 °C, its irradiation with a Ga focused ion beam, and substrate heating up to room temperature.

Insights and Implications of Intricate Surface Charge Transfer and sp-Defects in Graphene/Metal Oxide Interfaces.

Adherence of metal oxides to graphene is of fundamental significance to graphene nanoelectronic and spintronic interfaces. Titanium oxide and aluminum oxide are two widely used tunnel barriers in such devices, which offer optimum interface resistance and distinct interface conditions that govern transport parameters and device performance. Here, we reveal a fundamental difference in how these metal oxides interface with graphene through electrical transport measurements and Raman and photoelectron spectroscopies, combined with ab initio electronic structure calculations of such interfaces.