The dominant role of exciton quenching in PbS quantum-dot-based photovoltaic devices.

We present a quantitative measurement of the number of trapped carriers combined with a measurement of exciton quenching to assess limiting mechanisms for current losses in PbS-quantum-dot-based photovoltaic devices. We use photocurrent intensity dependence and short-wave infrared transient photoluminescence and correlate these with device performance. We find that the effective density of trapped carriers ranges from 1 in 10 to 1 in 10,000 quantum dots, depending on ligand treatment, and that nonradiative exciton quenching, as opposed to recombination with trapped carriers, is likely the limiting mechanism in these devices.

Direct probe of spectral inhomogeneity reveals synthetic tunability of single-nanocrystal spectral linewidths.

The spectral linewidth of an ensemble of fluorescent emitters is dictated by the combination of single-emitter linewidths and sample inhomogeneity. For semiconductor nanocrystals, efforts to tune ensemble linewidths for optical applications have focused primarily on eliminating sample inhomogeneities, because conventional single-molecule methods cannot reliably build accurate ensemble-level statistics for single-particle linewidths. Photon-correlation Fourier spectroscopy in solution (S-PCFS) offers a unique approach to investigating single-nanocrystal spectra with large sample statistics and high signal-to-noise ratios, without user selection bias and at fast timescales.

Controlled placement of colloidal quantum dots in sub-15 nm clusters.

We demonstrated a technique to control the placement of 6 nm-diameter CdSe and 5 nm-diameter CdSe/CdZnS colloidal quantum dots (QDs) through electron-beam lithography. This QD-placement technique resulted in an average of three QDs in each cluster, and 87% of the templated sites were occupied by at least one QD. These QD clusters could be in close proximity to one another, with a minimum separation of 12 nm.

Nanopatterned electrically conductive films of semiconductor nanocrystals.

We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as cracking and clustering that typically exist in larger-scale films. We find that the electrical conductivity of the nanoscale films is 180 times higher than that of drop-cast, microscopic films made of the same type of nanocrystal.

Bias-stress effect in 1,2-ethanedithiol-treated PbS quantum dot field-effect transistors.

We investigate the bias-stress effect in field-effect transistors (FETs) consisting of 1,2-ethanedithiol-treated PbS quantum dot (QD) films as charge transport layers in a top-gated configuration. The FETs exhibit ambipolar operation with typical mobilities on the order of μ(e) = 8 × 10(-3) cm(2) V(-1) s(-1) in n-channel operation and μ(h) = 1 × 10(-3) cm(2) V(-1) s(-1) in p-channel operation. When the FET is turned on in n-channel or p-channel mode, the established drain-source current rapidly decreases from its initial magnitude in a stretched exponential decay, manifesting the bias-stress effect.

Imaging Schottky barriers and ohmic contacts in PbS quantum dot devices.

We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the lateral depletion width and related photovoltaic properties in the planar Schottky type contacts. Titanium/QD contacts exhibited depletion widths that varied over a wide range as a function of bias voltage, while the gold/QD contacts showed ohmic behavior over the same voltage range.

Improved current extraction from ZnO/PbS quantum dot heterojunction photovoltaics using a MoO3 interfacial layer.

The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of a MoO(3) interlayer between the PbS colloidal quantum dot film and the top-contact anode. Through a combination of current-voltage characterization, circuit modeling, Mott-Schottky analysis, and external quantum efficiency measurements performed with bottom- and top-illumination, these enhancements are shown to stem from the elimination of a reverse-bias Schottky diode present at the PbS/anode interface.

Colloidal PbS quantum dot solar cells with high fill factor.

We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FF) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (VOC) of 0.

Self-assembling fullerenes for improved bulk-heterojunction photovoltaic devices.

The fullerene adducts 1a and 1b, whose molecular shapes either promote or hinder the formation of 1-D stacks, have been examined for their potential to form 1-D wire-like domains in bulk-heterojunction organic solar cells. The photovoltaic efficiency of solar cells based on blends of the stacking fullerene 1a with regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) is greatly enhanced compared to nonstacking model fullerene 1b.