High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region.

High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration.

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage.

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology.

Spatial Frequency Multiplexed Meta-Holography and Meta-Nanoprinting.

Metasurfaces are flat structured surfaces that are designed to control the two-dimensional distributions of phase, polarization, and intensity profiles of optical waves. Usually, the optical response of metasurfaces is dispersive and polarization-dependent, which indicates the capability of using metasurfaces for information multiplexing using wavelengths and polarization states. However, most multiplexing techniques based on metasurfaces reported so far occur only in the spatial domain.