Ultra-low detection limit chemoresistive NO gas sensor using single transferred MoS flake: an advanced nanofabrication.

In this work, a method of fabricating a NO nano-sensor working at room temperature with a low detectable concentration limit is proposed. A 2D-MoS flake is isolated by transferring a single MoS flake to SiO/Si substrate, followed by applying an advanced e-beam lithography (EBL) to form a metal contact with Au/Cr electrodes. The resulting chemoresistive nano-sensor using a single MoS flake was applied to detect a very low concentration of NO at the part-per-billion (ppb) level.