InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm.

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm.

Intracavity Raman conversion of a red semiconductor disk laser using diamond.

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%.

Tunable continuous-wave diamond Raman laser.

Continuous-wave operation of a diamond Raman laser, intracavity-pumped by a diode-pumped InGaAs semiconductor disk laser (SDL), is reported. The Raman laser, which utilized a 6.5-mm-long synthetic single-crystal diamond, reached threshold for 5.

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity.

A KGd(WO₄)₂ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.