Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.

MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.