Publications by authors named "Daniel Pino Munoz"

Article Synopsis
  • This work presents dark-field X-ray microscopy (DFXM) as a powerful 3D imaging technique for analyzing novel gallium nitride (GaN) structures on nano-pillars designed for optoelectronic devices.
  • The GaN layers are expected to bond cohesively into a well-oriented film due to the softening of the SiO layer during growth, with DFXM achieving extremely precise orientation (standard deviation of 0.04°) for GaN nanostructures.
  • The findings from both nanoscale DFXM and macro-scale X-ray diffraction confirm that the coalescing GaN layers cause intentional misorientation in the silicon nano-pillars, highlighting the technique's potential for developing high-quality GaN
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Electromagnetic forming (EMF) is one of the most popular high-speed forming processes for sheet metals. However, modeling this process in 3D often requires huge computational time since it deals with a strongly coupled multi-physics problem. The numerical tools that are capable of modeling this process rely either on shell elements-based approaches or on full 3D elements-based approaches.

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We study rapidly accelerating rupture fronts at the onset of frictional motion by performing high-temporal-resolution measurements of both the real contact area and the strain fields surrounding the propagating rupture tip. We observe large-amplitude and localized shear stress peaks that precede rupture fronts and propagate at the shear-wave speed. These localized stress waves, which retain a well-defined form, are initiated during the rapid rupture acceleration phase.

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