Tin(IV) Oxide Electron Transport Layer via Industrial-Scale Pulsed Laser Deposition for Planar Perovskite Solar Cells.

Electron transport layers (ETL) based on tin(IV) oxide (SnO) are recurrently employed in perovskite solar cells (PSCs) by many deposition techniques. Pulsed laser deposition (PLD) offers a few advantages for the fabrication of such layers, such as being compatible with large scale, patternable, and allowing deposition at fast rates. However, a precise understanding of how the deposition parameters can affect the SnO film, and as a consequence the solar cell performance, is needed.

Simple approach for an electron extraction layer in an all-vacuum processed n-i-p perovskite solar cell.

Vacuum processing is considered to be a promising method allowing the scalable fabrication of perovskite solar cells (PSCs). In vacuum processed PSCs, the n-i-p structure employing organic charge transport layers is less common than the p-i-n structure due to limited options to achieve an efficient electron extraction layer (EEL) on indium tin oxide (ITO) with vacuum thermal evaporation. There are a number of specific applications where an n-i-p structure is required and therefore, it is of interest to have alternative solutions for the n-type contact in vacuum processed PSCs.

Efficient Vacuum Deposited P-I-N Perovskite Solar Cells by Front Contact Optimization.

Hole transport layers (HTLs) are of fundamental importance in perovskite solar cells (PSCs), as they must ensure an efficient and selective hole extraction, and ohmic charge transfer to the corresponding electrodes. In p-i-n solar cells, the ITO/HTL is usually not ohmic, and an additional interlayer such as MoO is usually placed in between the two materials by vacuum sublimation. In this work, we evaluated the properties of the MoO/TaTm (TaTm is the HTL N4,N4,N4″,N4″-tetra([1,1'-biphenyl]-4-yl)-[1,1':4',1″-terphenyl]-4,4″-diamine) hole extraction interface by selectively annealing either MoO (prior to the deposition of TaTm) or the bilayer MoO/TaTm (without pre-treatment on the MoO), at temperature ranging from 60 to 200°C.

Short Photoluminescence Lifetimes in Vacuum-Deposited CHNHPbI Perovskite Thin Films as a Result of Fast Diffusion of Photogenerated Charge Carriers.

It is widely accepted that a long photoluminescence (PL) lifetime in metal halide perovskite films is a crucial and favorable factor, as it ensures a large charge diffusion length leading to a high power conversion efficiency (PCE) in solar cells. It has been recently found that vacuum-evaporated CHNHPbI (eMAPI) films show very short PL lifetimes of several nanoseconds. The corresponding solar cells, however, have high photovoltage (>1.

Room-Temperature Cubic Phase Crystallization and High Stability of Vacuum-Deposited Methylammonium Lead Triiodide Thin Films for High-Efficiency Solar Cells.

Methylammonium lead triiodide (MAPI) has emerged as a high-performance photovoltaic material. Common understanding is that at room temperature, it adopts a tetragonal phase and it only converts to the perfect cubic phase around 50-60 °C. Most MAPI films are prepared using a solution-based coating process, yet they can also be obtained by vapor-phase deposition methods.

Consistent Device Simulation Model Describing Perovskite Solar Cells in Steady-State, Transient, and Frequency Domain.

A variety of experiments on vacuum-deposited methylammonium lead iodide perovskite solar cells are presented, including JV curves with different scan rates, light intensity-dependent open-circuit voltage, impedance spectra, intensity-modulated photocurrent spectra, transient photocurrents, and transient voltage step responses. All these experimental data sets are successfully reproduced by a charge drift-diffusion simulation model incorporating mobile ions and charge traps using a single set of parameters. While previous modeling studies focused on a single experimental technique, we combine steady-state, transient, and frequency-domain simulations and measurements.

Phosphomolybdic acid as an efficient hole injection material in perovskite optoelectronic devices.

Efficient perovskite devices consist of a perovskite film sandwiched between charge selective layers, in order to avoid non-radiative recombination. A common metal oxide used as a p-type or hole transport layer is molybdenum oxide. MoO3 is of particular interest for its very large work function, which allows it to be used both as an interfacial charge transfer material and a dopant for organic semiconductors.

Interfacial Modification for High-Efficiency Vapor-Phase-Deposited Perovskite Solar Cells Based on a Metal Oxide Buffer Layer.

Vacuum deposition is one of the most technologically relevant techniques for the fabrication of perovskite solar cells. The most efficient vacuum-based devices rely on doped organic contacts, compromising the long-term stability of the system. Here, we introduce an inorganic electron-transporting material to obtain power conversion efficiencies matching the best performing vacuum-deposited devices, with open-circuit potential close to the thermodynamic limit.

Strontium Insertion in Methylammonium Lead Iodide: Long Charge Carrier Lifetime and High Fill-Factor Solar Cells.

The addition of Sr in CH NH PbI perovskite films enhances the charge carrier collection efficiency of solar cells leading to very high fill factors, up to 85%. The charge carrier lifetime of Sr -containing perovskites is in excess of 40 μs, longer than those reported for perovskite single crystals.