Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics.

In this paper, we present an optimization of the planar manufacturing scheme for stretch-free, shape-induced metal interconnects to simplify fabrication with the aim of maximizing the flexibility in a structure regarding stress and strain. The formation of trenches between silicon islands is actively used in the lithographic process to create arc shape structures by spin coating resists into the trenches. The resulting resist form is used as a template for the metal lines, which are structured on top.