The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents.

Due to superior material properties of SiC for high-voltage devices, SiC Schottky diodes are used in energy-conversion systems such as solar-cell inverters, battery chargers, and power modules for electric cars and unmanned aerial vehicles. The reliable operation of these systems requires the chip temperature of SiC Schottky diodes to be maintained within the limit set by the device package. This is especially crucial during surge-current events that dissipate heat within the device.

Integrated, Transparent Silicon Carbide Electronics and Sensors for Radio Frequency Biomedical Therapy.

The integration of micro- and nanoelectronics into or onto biomedical devices can facilitate advanced diagnostics and treatments of digestive disorders, cardiovascular diseases, and cancers. Recent developments in gastrointestinal endoscopy and balloon catheter technologies introduce promising paths for minimally invasive surgeries to treat these diseases. However, current therapeutic endoscopy systems fail to meet requirements in multifunctionality, biocompatibility, and safety, particularly when integrated with bioelectronic devices.

Quantified density of performance-degrading near-interface traps in SiC MOSFETs.

Characterization of near-interface traps (NITs) in commercial SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns.