Publications by authors named "Danfeng Pan"

Persistent activation of polymorphonuclear neutrophils (PMNs) plays a crucial role in the development of sepsis-related acute lung injury (ALI). This study investigated key molecular mechanisms involved in the hyperactivation of PMNs during ALI. A mouse model of sepsis-related ALI was generated by lipopolysaccharide (LPS) injection.

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Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI/MnBiTe ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage.

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In this paper, SiN film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH flow during the deposition of SiN can significantly affect the performances of metal-insulator-semiconductor (MIS) HEMTs. Compared to that without using NH flow, the device with the optimized NH flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%.

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Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction distance, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS transistors with asymmetric dielectric cleanliness.

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A superconducting nanowire single-photon imager (SNSPI) uses a time-multiplexing method to reduce the readout complexity. However, due to the serial connection, the nanowire should be uniform so that a common bias can set all segments of the nanowire to their maximum detection efficiency, which becomes more challenging as the scalability (i.e.

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Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature.

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Objective: To explore the association between the levels of plasma D-dimer and the disease severity and prognosis of pneumonia (MPP) in children.

Methods: We retrospectively analyzed the clinical data of pediatric MPP patients who were admitted in our hospital between January 1, 2016 and December 31, 2018. According to the peak value of D-dimer, patients were divided into the normal group (D-dimer<0.

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The electrical and optical properties of Ag/p-GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance ( ) values as low as 1.2 × 10 Ω·cm were obtained from the Ag/p-GaN contact annealed at 400 °C for 60 s in ambient O/N (1:10).

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Objective: To determine the effects of levetiracetam in combination with topiramate on immune function, cognitive function, and the neuronal nutritional status of children with intractable epilepsy.

Methods: This study enrolled 124 children with intractable epilepsy who were admitted to our hospital. The control group included 58 children treated with topiramate, and the observation group included 66 children treated with levetiracetam and topiramate.

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Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays.

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Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon. However, despite extensive efforts, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS) single crystals on a C-plane sapphire.

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Objective: This study aimed to investigate the distribution of multidrug-resistant organisms in pediatric patients with infectious pneumonia and to analyze their resistance and risk factors.

Methods: Pediatric patients infected with five MDROs (MRSA, MDR-PA, MDRAB, ESBL KP, and ESBL ) and five sensitive bacteria (MSSA, PA, AB, KP, and ) were recruited as the study cohort. The distribution of the MDROs and the risk factors for MDRO-infected pneumonia were investigated.

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The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer organic crystal, ferroelectric HfZrO gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. The overall optimization of transconductance, subthreshold swing and output resistance leads to transistor intrinsic gain and amplifier voltage gain over 5.

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Electrets are dielectric materials that have a quasi-permanent dipole polarization. A single-molecule electret is a long-sought-after nanoscale component because it can lead to miniaturized non-volatile memory storage devices. The signature of a single-molecule electret is the switching between two electric dipole states by an external electric field.

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The niobium nitride (NbN) nanowires fabricated with the high-quality ultra-thin NbN film with a thickness of 3 nm-6 nm were widely used for single photon detectors. These nanowires had a low aspect ratio, less than 1:20. However, increasing the thickness and the aspect ratio of highly-uniformed NbN nanowires without reducing the superconductivity is crucial for the device in detecting high-energy photons.

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In this Letter, we propose and demonstrate a new type of planar double-slot antenna for a microbolometer terahertz (THz) detector. The calculated results show that the planar antenna possessed high coupling efficiency, and the THz signals were obviously focused on the antenna center place. The new planar antenna was integrated with microbolometer THz detectors using micro-fabrication technology.

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Many classic and quantum devices need to operate at cryogenic temperatures, demanding advanced cryogenic digital electronics for processing the input and output signals on a chip to extend their scalability and performance. Here, we report a superconducting binary encoder with ultralow power dissipation and ultracompact size. We introduce a multigate superconducting nanowire cryotron (nTron) that functions as an 8-input OR gate within a footprint of approximately 0.

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As one of the bismuth-based oxychalcogenide materials, BiOSe ultrathin films have received intense research interest due to their high carrier mobility, narrow bandgaps, ultrafast intrinsic photoresponse and long-term ambient stability; they exhibit great potential in electronic and optoelectronic applications. However, the device performance of photodetectors based on metal/BiOSe/metal structures has degraded due to the undesirable defects or contaminants from the electrode deposition or the sample transfer processes. In this work, highly efficient photodetectors based on Au/BiOSe junctions were achieved with Au electrodes transferred under the assistance of a probe tip to avoid contaminants from traditional lighography methods.

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Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted considerable attention because of their promising potential for memory applications, while a critical issue is the large energy consumption mainly caused by a high operating voltage and slow data switching. Here, we employ ultrathin ferroelectric polymer and semiconducting molecular crystals to create low-voltage Fe-OFET memories. Devices require only pJ-level energy consumption.

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A reflective grating-coupled structure on the silicon substrate was designed to improve the detection efficiency of terahertz detectors for the frequency ranging from 0.26 THz to 0.36 THz.

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Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO (T-BFO) films by the pulsed laser deposition technique.

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Multiferroic La-doped BiFeO3 thin films have been prepared by a sol-gel plus spin-coating process, and the local magnetoelectric coupling effect has been investigated by the magnetic-field-assisted scanning probe microscopy connected with a ferroelectric analyzer. The local ferroelectric polarization response to external magnetic fields is observed and a so-called optimized magnetic field of ~40 Oe is obtained, at which the ferroelectric polarization reaches the maximum. Moreover, we carry out the magnetic-field-dependent surface conductivity measurements and illustrate the origin of local magnetoresistance in the La-doped BiFeO3 thin films, which is closely related to the local ferroelectric polarization response to external magnetic fields.

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Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit.

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A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane.

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