Effects of Zn and Ga doping on the quantum yield of cluster-derived InP quantum dots.

As the commercial display market grows, the demand for low-toxicity, highly emissive, and size-tunable semiconducting nanoparticles has increased. Indium phosphide quantum dots represent a promising solution to these challenges; unfortunately, they typically suffer from low inherent emissivity resulting from charge carrier trapping. Strategies to improve the emissive characteristics of indium phosphide often involve zinc incorporation into or onto the core itself and the fabrication of core/shell heterostructures.

Conversion of InP Clusters to Quantum Dots.

Understanding and deconvoluting the different mechanisms involved in the synthesis of nanomaterials is necessary to make uniform materials with desirable function. In this study, in situ spectroscopic methods were used to study exchange reactions at the surface of indium phosphide clusters, revealing that the cluster surface lacks significant dynamics on the NMR time-scale at room temperature. The exchange of surface carboxylate ligands can be induced at elevated temperatures and with the addition of carboxylic acid and indium carboxylate.