Impact of beam size and diffraction effects in the measurement of long-range electric fields in crystalline samples via 4DSTEM.

Measuring long-range electric fields by 4-dimensional scanning transmission electron microscopy (4DSTEM) is on the verge to becoming an established method, though quantifying and understanding all underlying processes remains a challenge. To gain further insight into these processes, experimental studies employing the center-of-mass (COM) method of the model system of a GaAs p-n junction are carried out in which three ranges of the semi-convergence angle α are identified, with an intermediate one where measuring the built-in potential V is not feasible. STEM multislice simulations including both atomic and nm-scale fields prove that this intermediate range begins once diffraction disks start overlapping with the undiffracted beam.

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM.

Most of today's electronic devices, like solar cells and batteries, are based on nanometer-scale built-in electric fields. Accordingly, characterization of fields at such small scales has become an important task in the optimization of these devices. In this study, with GaAs-based p-n junctions as the example, key characteristics such as doping concentrations, polarity, and the depletion width are derived quantitatively using four-dimensional scanning transmission electron microscopy (4DSTEM).

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy.

Scanning transmission electron microscopy (STEM) allows to gain quantitative information on the atomic-scale structure and composition of materials, satisfying one of todays major needs in the development of novel nanoscale devices. The aim of this study is to quantify the impact of inelastic, i.e.