Publications by authors named "Daisuke Kiriya"

Article Synopsis
  • * This study presents a novel VO nanowire network temperature sensor fabricated on a flexible film, achieving long-term stability (>110 hours) and high sensitivity of approximately -1.5%/°C.
  • * The use of machine learning for data interpolation among sensors enhances measurement accuracy and allows for tactile mapping without increasing the number of sensors needed.
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Mechanical exfoliation methods of two-dimensional materials have been an essential process for advanced devices and fundamental sciences. However, the exfoliation method usually generates various thick flakes, and a bunch of thick bulk flakes usually covers an entire substrate. Here, we developed a method to selectively isolate mono- to quadlayers of transition metal dichalcogenides (TMDCs) by sonication in organic solvents.

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,-Dimethylformamide (DMF) is an essential solvent in industries and pharmaceutics. Its market size range was estimated to be 2 billion U.S.

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The interface between conventional semiconductors and aqueous ionic solutions is an important target in chemistry and materials science. Recently, a wide variety of research has been done on transition-metal dichalcogenides (TMDCs) for use as 2D layered semiconductors, and their optoelectronic properties have been widely explored. One representative TMDC, monolayer (1L) MoS, is known to show a photoluminescence (PL) signal of a direct band gap nature, and the PL intensity is dependent on the carrier concentration.

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Article Synopsis
  • * Researchers investigated the impact of surface charge transfer doping using benzyl viologen (BV) molecules and found a metal-insulator transition (MIT) in both monolayer and multilayer MoS when applying a negative gate voltage.
  • * The results indicate that the BV molecules significantly affect the surface layer of bulk MoS and that doping characteristics shift depending on the gate voltage, which is crucial for understanding and controlling the properties of thin-layer materials in electronic devices.
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  • Graphene nanoribbons (GNRs) are highly promising for electronic devices due to their excellent carrier mobility and ultra-thin nature, yet large-scale production remains challenging.
  • * The study introduces a method to create a large-scale GNR network using vanadium pentoxide (VO) nanowires assembled on graphene through electrostatic interactions and polymer layers.
  • * After etching away the nanowires, a stable GNR network structure is formed, demonstrating semiconductor properties, paving the way for future applications in electronics and physics.*
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Due to the direct band gap nature, extensive studies have been conducted to improve the optical behavior in monolayer transition metal dichalcogenides (TMDCs) with a formula of MX (M = Mo, W; X = S, Se, Te). One of the strongest modulating agents of optical behavior is a molecular superacid treatment; however, the chemical event has not been unveiled. Also, the engineering protocol for keeping the treatment is immature.

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Coordination polymers with metal-sulfur (M-S) bonds in their nodes have interesting optical properties and can be used as photocatalysts for water splitting. A wide range of inorganic-organic hybrid materials with M-S bonds have been prepared in recent years. However, there is a dearth of structural information because of their low crystallinity, which has hampered the understanding of their underlying chemistry and physics.

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To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY.

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Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post-silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non-destructive modulation method. Recently, a surface-charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures.

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Article Synopsis
  • - Modulating the electronic structure of transition metal dichalcogenides (TMDCs) is essential for enhancing the functionality of electronic and optical devices, particularly through localized changes in carrier concentration.
  • - A new method is introduced, utilizing spontaneous pattern formation in a molecular film when exposed to water, achieving localized carrier doping on a nanoscale of approximately 100 nm in TMDCs.
  • - The research highlights that the dynamics of pattern formation and molecular flow rate vary with TMDC thickness, enabling the creation of intricate electronic junctions essential for advancing optoelectronic technologies.
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Wearable sensors play a crucial role in realizing personalized medicine, as they can continuously collect data from the human body to capture meaningful health status changes in time for preventive intervention. However, motion artifacts and mechanical mismatches between conventional rigid electronic materials and soft skin often lead to substantial sensor errors during epidermal measurement. Because of its unique properties such as high flexibility and conformability, flexible electronics enables a natural interaction between electronics and the human body.

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Spontaneous pattern formation is an energetically favorable process and is shown in nature in molecular-scale assembly, biological association, and soft material organizations. The opposite regime, the artificial process, which is widely applied to the fabrication of semiconducting devices, such as lithographic techniques, requires enormous amounts of energy. Here, we propose a concept of tuning the properties of semiconducting MoS and WSe devices using the spontaneous pattern formation of adjacent molecular films.

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Monolayer molybdenum disulfide (MoS) is an atomically thin semiconducting material with a direct band gap. This physical property is attributable to atomically thin optical devices such as sensors, light-emitting devices, and photovoltaic cells. Recently, a near-unity photoluminescence (PL) quantum yield of a monolayer MoS was demonstrated via a treatment with a molecular acid, bis(trifluoromethane)sulfonimide (TFSI); however, the mechanism still remains a mystery.

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Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ, as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination.

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A major challenge in transistor technology scaling is the formation of controlled ultrashallow junctions with nanometer-scale thickness and high spatial uniformity. Monolayer doping (MLD) is an efficient method to form such nanoscale junctions, where the self-limiting nature of semiconductor surfaces is utilized to form adsorbed monolayers of dopant-containing molecules followed by rapid thermal annealing (RTA) to diffuse the dopants to a desired depth. Unlike ion implantation, the process does not induce crystal damage, thus making it highly attractive for nanoscale transistor processing.

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There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material.

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The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films.

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Molybdenum disulfide (MoS2) has been widely examined as a catalyst containing no precious metals for the hydrogen evolution reaction (HER); however, these examinations have utilized synthesized MoS2 because the pristine MoS2 mineral is known to be a poor catalyst. The fundamental challenge with pristine MoS2 is the inert HER activity of the predominant (0001) basal surface plane. In order to achieve high HER performance with pristine MoS2, it is essential to activate the basal plane.

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Printed electronics and sensors enable new applications ranging from low-cost disposable analytical devices to large-area sensor networks. Recent progress in printed carbon nanotube electronics in terms of materials, processing, devices, and applications is discussed on page 4397 by A. Javey and co-workers.

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Gold-mediated exfoliation of ultralarge optoelectronically perfect monolayers with lateral dimensions up to ≈500 μm is reported. Electrical, optical, and X-ray photo-electron spectroscopy characterization show that the quality of the gold-exfoliated flakes is similar to that of tape-exfoliated flakes. Large-area flakes allow manufacturing of large-area mono-layer transition metal dichalcogenide electronics.

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Optoelectronic devices based on two-dimensional (2D) materials have shown tremendous promise over the past few years; however, there are still numerous challenges that need to be overcome to enable their application in devices. These include improving their poor photoluminescence (PL) quantum yield (QY) as well as better understanding of exciton-based recombination kinetics. Recently, we developed a chemical treatment technique using an organic superacid, bis(trifluoromethane)sulfonimide (TFSI), which was shown to improve the quantum yield in MoS2 from less than 1% to over 95%.

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Printing technologies offer large-area, high-throughput production capabilities for electronics and sensors on mechanically flexible substrates that can conformally cover different surfaces. These capabilities enable a wide range of new applications such as low-cost disposable electronics for health monitoring and wearables, extremely large format electronic displays, interactive wallpapers, and sensing arrays. Solution-processed carbon nanotubes have been shown to be a promising candidate for such printing processes, offering stable devices with high performance.

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Wearable sensor technologies are essential to the realization of personalized medicine through continuously monitoring an individual's state of health. Sampling human sweat, which is rich in physiological information, could enable non-invasive monitoring. Previously reported sweat-based and other non-invasive biosensors either can only monitor a single analyte at a time or lack on-site signal processing circuitry and sensor calibration mechanisms for accurate analysis of the physiological state.

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