Publications by authors named "Dai C Tran"
Article Synopsis
- Tellurium (Te) is gaining attention as a two-dimensional material due to its high mobility, stability, and low-temperature processing compatibility, but uniform large-area deposition remains challenging.
- Atomic layer deposition (ALD), specifically high-pressure ALD with a multiple-dosing strategy, is proposed as a solution, enabling layer-by-layer growth of Te thin films.
- The developed method achieves a Hall mobility of 51.2 cm V s and improved stability, marking a significant leap in Te thin film fabrication and its potential for advanced technologies.
Amorphous molybdenum sulfide (MoS ) is a promising alternative to Pt catalyst for the H evolution in water. However, it is suffered of an electrochemical corrosion. In this report, we present a strategy to tack this issue by embedding the MoS catalyst within a porous poly(3,4-ethylenedioxythiophene) (PEDOT) matrix.
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