Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications.

The effect of W and WO electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the deposition of tungsten, the W electrode was formed using only Ar gas, while the WO electrode was formed using a mixture of Ar and O gases. The W-based MFM capacitors exhibited superior remnant polarization (2P of 107.