Effect of Metal-Precursor Stacking Order on Volume-Defect Formation in CZTSSe Thin Film: Formation Mechanism of Blisters and Nanopores.

In this study, we investigated the effect of the stacking order of metal precursors on the formation of volume defects, such as blisters and nanopores, in CZTSSe thin-film solar cells. We fabricated CZTSSe thin films using three types of metal-precursor combinations, namely, Zn/Cu/Sn/Mo, Cu/Zn/Sn/Mo, and Sn/Cu/Zn/Mo, and studied the blister formation. The blister-formation mechanism was based on the delamination model, taking into consideration the compressive stress and adhesion properties.

CZTSSe Formation Mechanism Using a Cu/Zn/SnS Stacked Precursor: Origin of Triple CZTSSe Layer Formation.

In this study, to control the formation of non-uniformly distributed large voids and Cu-Sn alloy agglomeration, which leads to local compositional misfit and secondary phase formation, a SnS compound precursor was applied instead of metal Sn to avoid compositional non-uniformity. Using a Cu/Zn/SnS stacked precursor, a temperature tracking experiment was conducted to confirm the formation controllability of the void and the secondary phase. According to the results of this temperature-profile tracking experiment, it was confirmed that the large void was successfully controlled; however, an additional ZnSSe secondary phase layer was formed in the middle of the CZTSSe upper layer and small voids were distributed relatively uniformly in the bottom CZTSSe layer.

Effect of AlO Dot Patterning on CZTSSe Solar Cell Characteristics.

In this study, a 5-nm thick AlO layer was patterned onto the Mo electrode in the form of a dot to produce a local rear contact, which looked at the effects of this contact structure on CuZnSn(SSe) (CZTSSe) growth and solar cell devices. Mo was partially exposed through open holes having a square dot shape, and the closed-ratios of AlO passivated areas were 56%, 75%, and 84%. The process of synthesizing CZTSSe is the same as that of the previous process showing 12.

Self-Alignment of Bottom CZTSSe by Patterning of an AlO Intermediate Layer.

When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an AlO-patterned Mo substrate. The CZTSSe in the lower part self-aligns on the Mo-exposed area, while the voids self-align on the AlO-coated area.

Flexible CuZnSn(S,Se) solar cells with over 10% efficiency and methods of enlarging the cell area.

For kesterite copper zinc tin sulfide/selenide (CZTSSe) solar cells to enter the market, in addition to efficiency improvements, the technological capability to produce flexible and large-area modules with homogeneous properties is necessary. Here, we report a greater than 10% efficiency for a cell area of approximately 0.5 cm and a greater than 8% efficiency for a cell area larger than 2 cm of certified flexible CZTSSe solar cells.

Secondary Phase Formation Mechanism in the Mo-Back Contact Region during Sulfo-Selenization Using a Metal Precursor: Effect of Wettability between a Liquid Metal and Substrate on Secondary Phase Formation.

Recently, highly efficient CZTS solar cells using pure metal precursors have been reported, and our group created a cell with 12.6% efficiency, which is equivalent to the long-lasting world record of IBM. In this study, we report a new secondary phase formation mechanism in the back contact interface.

Effect of Sulfurization Temperature on Solution-Processed Cu2ZnSnS4 Thin Films.

Cu2ZnSnS4 (CZTS) solar cells are attracting significant attention as an alternative to CIGS (Culn1-xGa(x)S2) solar cells because of the non-toxic and inexpensive constituent elements of CZTS. Recently, solution-based deposition methods are being developed because they have advantages such as suitability for use in large-area deposition, high-throughput manufacturing, and a very short energy payback time with drastically lower manufacturing costs. In this work, we fabricated solution-based CZTS thin films and investigated them in order to observe the effects of sulfurization temperature on CZTS thin films.

Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors.

We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs.

Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.

In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition.

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process.

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%.

Effects of addition of Ta and Y ions to InZnO thin film transistors by sol-gel process.

We have investigated the effects of the addition of tantalum (Ta) and yttrium (Y) ions to InZnO thin film transistors (TFTs) using the sol-gel process. TaInZnO and YInZnO TFTs had significantly lower off current and higher on-to-off current ratio than InZnO TFTs. Ta and Y ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability.

Pixel-isolation walls of liquid crystal display based on prepolymer containing vinyl cinnamate.

Pixel-isolated liquid crystal (PILC) mode investigated in this work is obtained by phase separation induced by the anisotropic photoreaction of a prepolymer containing a vinyl cinnamate monomer. It was found that the incorporation of the cinnamate monomer was an efficient method for the control of the interfacial properties between LC and polymer walls. Polarization-selective photo-curing of the prepolymer containing a cinnamate monomer was closely related with the liquid crystal orientation at the polymer wall boundary resulting in electro-optical performance improvement.

Lattice-patterned LC-polymer composites containing various nanoparticles as additives.

In this study, we show the effect of various nanoparticle additives on phase separation behavior of a lattice-patterned liquid crystal [LC]-polymer composite system and on interfacial properties between the LC and polymer. Lattice-patterned LC-polymer composites were fabricated by exposing to UV light a mixture of a prepolymer, an LC, and SiO2 nanoparticles positioned under a patterned photomask. This resulted in the formation of an LC and prepolymer region through phase separation.

Retention characteristics of Schottky barrier tunneling transistor-nano floating gate memory with various side walls.

At present, the nano floating gate memory (NFGM) device has shown a great promise as a ultra-dense, high-endurance memory device for low-power applications. As the size of the NFGM reduced, the short channel effect became one of the critical issues in the base Field Effect Transistor (FET). Schottky barrier tunneling transistor (SBTT) can improve the controllability of the short channel effect.

Pixel-isolation liquid crystals formed by polarization-selective UV-curing of a prepolymer containing cinnamate oligomer.

A pixel isolated liquid crystal display was fabricated by polarization-selective anisotropic photoreaction of a prepolymer containing a cinnamate oligomer. The cinnamate oligomer was mainly distributed on the surface region of a UV-cured polymer wall. Anisotropic photo-dimerization of cinnamate moiety was achieved by polarized UV exposure.