Enhancement of Co nucleation on the TaN(x) film surface in Co MOCVD.

In this work, the Co film was deposited by chemical vapor deposition (CVD) on TaN(x)/SiO2/Si substrate at various NH3/H2 gas flow ratio (0, 0.08, 0.11, 0.

Al2O3/TiO2 multilayer passivation layers grown at low temperature for flexible organic devices.

In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titanium oxide (TiO2) was examined. The films were deposited on poly(ether sulfone) (PES) substrates via electron cyclotron resonance atomic layer deposition (ECR-ALD) at various deposition temperatures. The optimum plasma power and deposition temperature were investigated through measurements of the refractive index and packing density of the Al2O3 and TiO2 films.

Effects of NH3 plasma pre-treatment of Ta substrate on atomic layer deposition of Cu thin film.

Cu has replaced Al as an interconnection material in ultra-large integrated circuits, reducing resistance capacitance delay and yielding higher electro-migration reliability. However, as the feature size decreases, it becomes more difficult to produce reliable Cu wiring. In this work, the Plasma Enhanced Atomic Layer Deposition (PEALD) of Cu seed layers deposited on Ta substrates (both with and without NH3 plasma pretreatment) was investigated.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current.