Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure.

For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gateless p-channel metal oxide semiconductor field-effect transistor (MOSFET). In the pillar formation, we adopted an amorphous carbon layer to protect the Ge surface from both physical and chemical damage by subsequent processes.

Author Correction: A frequency reconfigurable dipole antenna with solid-state plasma in silicon.

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.

A frequency reconfigurable dipole antenna with solid-state plasma in silicon.

A frequency reconfigurable dipole antenna based on a silicon radiator is presented. The silicon radiator is activated with the aid of highly dense solid-state plasma by injecting carriers into the intrinsic region of p-i-n diodes. The fabrication and design guideline of the reconfigurable dipole antenna with this plasma radiator are described.

On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments.

Microwave-induced thermal curing is demonstrated to improve the reliability and to prolong the lifetime of chips containing nanoscale electron devices. A film containing graphite powder with high microwave absorbing efficiency was fabricated at low cost. The film is flexible, bendable, foldable, and attachable to a chip.

Reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma.

This paper describes the fabrication and characterization of a reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma. The silicon reflector, composed of serially connected p-i-n diodes, forms a highly dense solid-state plasma by injecting electrons and holes into the intrinsic region. When this plasma silicon reflector is turned on, the front-realized gain of the antenna increases by more than 2 dBi beyond 5.