Fabrication of extreme-ultraviolet point-diffraction interferometer aperture arrays.

Interferometric testing at the design wavelength is required for accurately characterizing the wave front of an imaging system operating in the extreme ultraviolet. The fabrication of point-diffraction interferometer apertures for extreme ultraviolet wave-front aberration analysis is described. The apertures are formed in a 200-nm-thick low-pressure chemical-vapor-deposited Si(3)N(4) film and vary in size from approximately 0.

Biocompatibility of chemical-vapour-deposited diamond.

The biocompatibility of chemical-vapour-deposited (CVD) diamond surfaces has been assessed. Our results indicate that CVD diamond is as biocompatible as titanium (Ti) and 316 stainless steel (SS). First, the amount of adsorbed and 'denatured' fibrinogen on CVD diamond was very close to that of Ti and SS.

Polycrystalline CVD Diamond Films with High Electrical Mobility.

Advances in the deposition process have led to dramatic improvements in the electronic properties of polycrystalline diamond films produced by chemical vapor deposition (CVD). It is now possible to produce CVD diamond with properties approaching those of IIa natural diamonds. The combined electron-hole mobility, as measured by transient photoconductivity at low carrier density, is 4000 square centimeters per volt per second at an electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds.

Electrical Transport Properties of Undoped CVD Diamond Films.

Polycrystalline diamond films synthesized by microwave-assisted chemical vapor deposition (MACVD) were examined with transient photoconductivity, and two fundamental electrical transport properties, the carrier mobility and lifetime, were measured. The highest mobility measured is 50 centimeters squared per volt per second at low initial carrier densities (<10(15) per cubic centimeter). Electron-hole scattering causes the carrier mobility to decrease at higher carrier densities.