Dirac-Like Fermions Anomalous Magneto-Transport in a Spin-Polarized Oxide 2D Electron System.

In a 2D electron system (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, epitaxial engineering is used to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interfaces between LaAlO, EuTiO, and SrTiO insulators. The 2DES displays anomalous quantum corrections to the magneto-conductance driven by the time-reversal-symmetry breaking occurring below the magnetic transition temperature.

Tuning of the magnetotransport properties of a spin-polarized 2D electron system using visible light.

We report on the effects of visible light on the low temperature electronic properties of the spin-polarized two dimensional electron system (2DES) formed at the interfaces between LaAlO[Formula: see text], EuTiO[Formula: see text] and (001) SrTiO[Formula: see text]. A strong, persistent modulation of both longitudinal and transverse conductivity was obtained using light emitting diodes (LEDs) with emissions at different wavelengths in the visible spectrum range. In particular, Hall effect data show that visible light induces a non-volatile electron filling of bands with mainly 3d[Formula: see text] character, and at the same time an enhancement of the anomalous Hall effect associated to the magnetic properties of the system.

Charge Configuration Memory Devices: Energy Efficiency and Switching Speed.

Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τ as well as other parameters that have bearing on efficient device operation.

Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling.

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

Depairing Current at High Magnetic Fields in Vortex-Free High-Temperature Superconducting Nanowires.

Superconductors are essential in many present and future technologies, from large-scale devices for medical imaging, accelerators, or fusion experiments to ultra-low-power superconducting electronics. However, their potential applicability, and particularly that of high-temperature superconductors (HTS), is severely affected by limited performances at large magnetic fields and high temperatures, where their use is most needed. One of the main reasons for these limitations is the presence of quantized vortices, whose movements result in losses, internal noise, and reduced performances.