Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods.

Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s) that are different from GaAs and InGaP because of atomic rearrangements at the interface.

High power CW (16W) and pulse (145W) laser diodes based on quantum well heterostructures.

We suggested and experimentally confirmed the effective method of internal optical loss reduction by high order mode suppression in a separate confinement quantum well laser heterostructure with asymmetric ultra thick waveguide. Manufacturing of InGaAs/GaAs/AlGaAs laser heterostructure with a 1.7 microm-thick asymmetric waveguide allowed attaining super low value of internal optical loss alphai=0.

Pathomorphological peculiarities of microcirculatory bed in bronchial wall in workers employed in mining and chemical industry.

Morphological alterations of microvessels in bronchial mucosa and blood capillaries of alveolar septa during endobronchitis were examined in workers employed at a plutonium plant and not employed residents (Zheleznogorsk, Krasnoyarsk Region). Alterative, destructive, and dysadaptive changes in pulmonary vessels of workers were paralleled by developing reparative and adaptive processes in neighboring capillaries.