Publications by authors named "D Primetzhofer"
Memristive crossbar arrays (MCAs) offer parallel data storage and processing for energy-efficient neuromorphic computing. However, most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor (CMOS) technology still suffer from substantially larger energy consumption than biological synapses, due to the slow kinetics of forming conductive paths inside the memristive units. Here we report wafer-scale AgS-based MCAs realized using CMOS-compatible processes at temperatures below 160 °C.
View Article and Find Full Text PDFAmong the magnetocaloric materials featuring first-order phase transitions (FOPT), FeRh is considered as a reference system to study the FOPT because it is a "simple" binary system with a CsCl structure exhibiting a large adiabatic temperature change. Recently, ab initio theory predicted that changes in the Fe/Rh stoichiometry in the vicinity of equiatomic composition strongly influence the FOPT characteristics. However, this theoretical prediction was not clearly verified experimentally.
View Article and Find Full Text PDFArticle Synopsis
- Silicon-based color-centers (SiCCs) are being developed as promising quantum-light sources for integration with telecom-range Silicon Photonics platforms.
- Traditional methods for creating SiCCs face challenges in precisely controlling emitter positions due to random ion-implantation processes.
- A new method using low-temperature epitaxial growth allows for precise positioning of SiCCs, enabling the formation of various types, including a newly identified G'-center, which shows potential for single-photon sources and improved optical properties.
Article Synopsis
- The study compares the oxidation resistance of HfB and HfAlB thin films at 700 °C over 8 hours, showing that HfAlB has significantly better performance with an oxide scale thickness only 14% of that of HfB after oxidation.
- The improved oxidation resistance of HfAlB is attributed to its dense, primarily amorphous oxide scale, which includes Hf, Al, and B, reducing oxidation kinetics due to passivation.
- HfAlB outperforms similar Ti-Al-based boride and nitride thin films, with reductions in oxide scale thickness of 21% compared to TiAlB and 47% compared to TiAlN, demonstrating effective oxidation resistance despite its